Publications

Found 9 results
Author Title Type [ Year(Desc)]
Filters: Author is Golan, Y  [Clear All Filters]
1998
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied Physics Letters, vol. 73, no. 21: New York [etc.] American Institute of Physics., pp. 3090–3092, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied physics letters, vol. 73, no. 21: AIP, pp. 3090–3092, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
Golan, Y., P. Fini, SP. DenBaars, and JS. Speck, "Substrate reactivity and" controlled contamination" in MOCVD grown gallium nitride on sapphire.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 216: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U188–U188, 1998.
1999
Golan, Y., XH. Wu, JS. Speck, RP. Vaudo, and VM. Phanse, "Erratum:ìMorphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphireî[Appl. Phys. Lett. 73, 3090 (1998)]", Applied Physics Letters, vol. 74, no. 10: AIP, pp. 1498–1498, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, PT. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, UK. Mishra, et al., "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, SJ. Rosner, G. Girolami, P. T. Fini, JP. Ibbetson, S. Keller, S. DenBaars, et al., "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
2003
Golan, Y., P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, and JS. Speck, "High-quality GaN on intentionally roughened c-sapphire", The European Physical Journal Applied Physics, vol. 22, no. 1: EDP Sciences, pp. 11–14, 2003.