Publications

Found 5 results
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Filters: Author is Gallinat, CS and First Letter Of Title is I  [Clear All Filters]
2010
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
2009
Koblmüller, G., GD. Metcalfe, M. Wraback, F. Wu, CS. Gallinat, and JS. Speck, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
Metcalfe, GD., M. Wraback, F. Wu, CS. Gallinat, JS. Speck, and others, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
2008
King, PDC., TD. Veal, CS. Gallinat, G. Koblmüller, LR. Bailey, JS. Speck, and CF. McConville, "Influence of growth conditions and polarity on interface-related electron density in InN", Journal of Applied Physics, vol. 104, no. 10: AIP, pp. 103703, 2008.
Chern-Metcalfe, GD., ED. Readinger, H. Shen, M. Wraback, G. Koblmüller, CS. Gallinat, and JS. Speck, "Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1846–1848, 2008.