Publications

Found 3 results
Author Title Type [ Year(Asc)]
Filters: Author is Arehart, AR and First Letter Of Title is E  [Clear All Filters]
2016
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
2010
Arehart, AR., C. Poblenz, JS. Speck, and SA. Ringel, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 054518, 2010.
2006
Arehart, AR., B. Moran, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Effect of threading dislocation density on Ni/ n-Ga N Schottky diode I-V characteristics", Journal of applied physics, vol. 100, no. 2: AIP, pp. 023709, 2006.