Publications
] , "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
, "Impact of $$\backslash$hbox ${$CF$}$ _ ${$4$}$ $ Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9: IEEE, pp. 781–783, 2007.
, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.
, "Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L230, 2007.
, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), vol. 204, no. 6: Wiley Online Library, pp. 2049–2053, 2007.
, "N-polar Ga N/ Al Ga N/ Ga N high electron mobility transistors", Journal of Applied Physics, vol. 102, no. 4: AIP, pp. 044501, 2007.
, "N-polar GaN Electronics", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: IEEE, pp. 368–368, 2007.
, "Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.