Publications

Found 632 results
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2009
Koblmüller, G., GD. Metcalfe, M. Wraback, F. Wu, CS. Gallinat, and JS. Speck, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
Metcalfe, GD., M. Wraback, F. Wu, CS. Gallinat, JS. Speck, and others, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
Metcalfe, GD., M. Wraback, F. Wu, CS. Gallinat, JS. Speck, and others, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
Tsai, MY., ME. White, and JS. Speck, "Investigation of (110) Sn O 2 growth mechanisms on Ti O 2 substrates by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024911, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Sato, H., R. B. Chung, F. Wu, J. S. Speck, S. P. DenBaars, and S. Nakamura, MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES, 2009.
Bierwagen, O., M. E. White, M-Y. Tsai, T. Nagata, and J. S. Speck, "Non-alloyed Schottky and ohmic contacts to as-grown and oxygen-plasma treated n-type SnO2 (110) and (101) thin films", Applied Physics Express, vol. 2, no. 10: IOP Publishing, pp. 106502, 2009.
Kelchner, K. M., Y-. Da Lin, M. T. Hardy, C. Yen Huang, P. Shan Hsu, R. M. Farrell, D. A. Haeger, H. Chih Kuo, F. Wu, K. Fujito, et al., "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
Tyagi, A., F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (11 2\= 2) GaN free standing substrates", Applied Physics Letters, vol. 95, no. 25: AIP, pp. 251905, 2009.
Shen, P. H., G. Garrett, M. Wraback, H. Zhong, A. Tyagi, J. Speck, and S. Nakamura, "Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells", Meeting Abstracts, no. 21: The Electrochemical Society, pp. 885–885, 2009.
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "Plasma-assisted molecular beam epitaxy of high quality In 2 O 3 (001) thin films on Y-Stabilized ZrO 2 (001) using in as an auto surfactant", Applied Physics Letters, vol. 95, no. 26: AIP, pp. 262105, 2009.
Masui, H., D. S. Kamber, S. E. Brinkley, F. Wu, T. J. Baker, H. Zhong, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Spontaneous formation of ${$1 1Ø 0 1$}$ InGaN quantum wells on a (1 1 2Ø 2) GaN template and their electroluminescence characteristics", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015003, 2009.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Terahertz emission from nonpolar indium nitride", Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on: IEEE, pp. 1–2, 2009.
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
Uedono, A., S. Ishibashi, S. Keller, C. Moe, P. Cantu, TM. Katona, DS. Kamber, Y. Wu, E. Letts, SA. Newman, et al., "Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation", Journal of Applied Physics, vol. 105, no. 5: AIP, pp. 054501, 2009.
2010
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Young, E. C., C. S. Gallinat, A. E. Romanov, A. Tyagi, F. Wu, and J. S. Speck, "Critical thickness for onset of plastic relaxation in (1122) and (2021) semipolar AlGaN heterostructures", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 111002, 2010.
Gallinat, CS., G. Koblmüller, F. Wu, and JS. Speck, "Evaluation of threading dislocation densities in In-and N-face InN", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 053517, 2010.
Matioli, E., B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, "High extraction efficiency GaN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals", Applied physics express, vol. 3, no. 3: IOP Publishing, pp. 032103, 2010.
Matioli, E., E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, "High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals", Applied physics letters, vol. 96, no. 3: AIP, pp. 031108, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
Raring, J. W., M. C. Schmidt, C. Poblenz, Y-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, et al., "High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 112101, 2010.

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