Publications

Found 2098 results
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2005
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. Denbaars>, S. Nakamura, and U. K. Mishra, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Farag, N., M. Bobeth, W. Pompe, AE. Romanov, and JS. Speck, "Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films", Journal of applied physics, vol. 97, no. 11: AIP, pp. 113516, 2005.
McLaurin, M., TE. Mates, and JS. Speck, "Molecular-beam epitaxy of p-type m-plane GaN", Applied Physics Letters, vol. 86, no. 26: AIP, pp. 262104, 2005.
Armstrong, A., A. Arehart, D. Green, JS. Speck, UK. Mishra, and SA. Ringel, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2411–2414, 2005.
Akopian, N., G. Bahir, D. Gershoni, MD. Craven, JS. Speck, and SP. DenBaars, "Optical evidence for lack of polarization in (11 2\= 0) oriented GaN/(AlGa) N quantum structures", Applied Physics Letters, vol. 86, no. 20: AIP, pp. 202104, 2005.
Masui, H., A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.
Ghosh, S., P. Misra, HT. Grahn, B. Imer, S. Nakamura, SP. DenBaars, Speck, and JS, Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire: AIP, 2005.
Chakraborty, A., S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, P. M. Petroff, and JS. Speck, "Quantification of Ga surface coverages and their desorption kinetics on GaN (0001) and (000-1) surfaces", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2178–2182, 2005.
Chichibu, SF., T. Koida, MD. Craven, BA. Haskell, T. Onuma, T. Sota, JS. Speck, SP. DenBaars, and S. Nakamura, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
Chichibu, SF., T. Koida, MD. Craven, BA. Haskell, T. Onuma, T. Sota, JS. Speck, SP. DenBaars, and S. Nakamura, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
Farag, N., M. Bobeth, W. Pompe, AE. Romanov, and JS. Speck, "Rhombohedral LSMO films–a unique case of ferroelastic domain formation", physica status solidi (a), vol. 202, no. 4: WILEY-VCH Verlag, 2005.
Cantu, P., F. Wu, P. Waltereit, S. Keller, AE. Romanov, SP. DenBaars, and JS. Speck, "Role of inclined threading dislocations in stress relaxation in mismatched layers", Journal of applied physics, vol. 97, no. 10: AIP, pp. 103534, 2005.
Hansen, PJ., V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, UK. Mishra, RA. York, DG. Schlom, and JS. Speck, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
Hansen, PJ., V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, UK. Mishra, RA. York, DG. Schlom, and JS. Speck, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.

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