Publications

Found 2098 results
Author Title Type [ Year(Desc)]
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2009
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar m-plane group iii-nitride films grown on miscut substrates, 2009.
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "Plasma-assisted molecular beam epitaxy of high quality In 2 O 3 (001) thin films on Y-Stabilized ZrO 2 (001) using in as an auto surfactant", Applied Physics Letters, vol. 95, no. 26: AIP, pp. 262105, 2009.
Speck, J., "Progress in the growth, characterization and device performance for nonpolar and semipolar GaN-based materials", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CMM1, 2009.
Speck, J. S., Progress in the MBE Growth of InN, 2009.
Pimputkar, S., J. S. Speck, S. P. DenBaars, and S. Nakamura, "Prospects for LED lighting", Nature photonics, vol. 3, no. 4: Nature Publishing Group, pp. 180, 2009.
Masui, H., M. Schmidt, N. Fellows, H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Recent progress in nonpolar LEDs as polarized light emitters", physica status solidi (a), vol. 206, no. 2: Wiley Online Library, pp. 203–205, 2009.
Masui, H., M. Schmidt, N. Fellows, H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Recent progress in nonpolar LEDs as polarized light emitters", physica status solidi (a), vol. 206, no. 2: Wiley Online Library, pp. 203–205, 2009.
Gallinat, C. S., G. Koblmüller, and J. S. Speck, "The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN", Applied Physics Letters, vol. 95, no. 2: AIP, pp. 022103, 2009.
Fujiwara, T., S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors", Applied physics express, vol. 2, no. 6: IOP Publishing, pp. 061003, 2009.
Tamboli, A. C., M. C. Schmidt, S. Rajan, J. S. Speck, U. K. Mishra, S. P. DenBaars, and E. L. Hu, "Smooth top-down photoelectrochemical etching of m-plane GaN", Journal of The Electrochemical Society, vol. 156, no. 1: The Electrochemical Society, pp. H47–H51, 2009.
Tamboli, A. C., M. C. Schmidt, S. Rajan, J. S. Speck, U. K. Mishra, S. P. DenBaars, and E. L. Hu, "Smooth top-down photoelectrochemical etching of m-plane GaN", Journal of The Electrochemical Society, vol. 156, no. 1: The Electrochemical Society, pp. H47–H51, 2009.
Masui, H., D. S. Kamber, S. E. Brinkley, F. Wu, T. J. Baker, H. Zhong, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Spontaneous formation of ${$1 1Ø 0 1$}$ InGaN quantum wells on a (1 1 2Ø 2) GaN template and their electroluminescence characteristics", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015003, 2009.
Nagata, T., G. Koblmüller, O. Bierwagen, C. S. Gallinat, and J. S. Speck, "Surface structure and chemical states of a-plane and c-plane InN films", Applied Physics Letters, vol. 95, no. 13: AIP, pp. 132104, 2009.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Terahertz emission from nonpolar indium nitride", Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on: IEEE, pp. 1–2, 2009.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Terahertz emission from nonpolar indium nitride", Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on: IEEE, pp. 1–2, 2009.
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Xu, G., Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, et al., "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.

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