Publications

Found 2098 results
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2008
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061101, 2008.
Imer, B., M. Schmidt, B. Haskell, S. Rajan, B. Zhong, K. Kim, F. Wu, T. Mates, S. Keller, U. K. Mishra, et al., "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
Fernández-Garrido, S., G. Koblmüller, E. Calleja, and J. S. Speck, "In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 104, no. 3: AIP, pp. 033541, 2008.
Wraback, M., G. D. Chern, E. D. Readinger, P. H. Shen, G. Koblmüller, C. Gallinat, and J. S. Speck, "Indium Nitride: A New Material for High Efficiency, Compact, 1550nm Laser-Based Terahertz Sources in Chemical and Biological Detection", International Journal of High Speed Electronics and Systems, vol. 18, no. 01: World Scientific, pp. 3–9, 2008.
Wraback, M., G. D. Chern, E. D. Readinger, P. H. Shen, G. Koblmüller, C. Gallinat, and J. S. Speck, "Indium Nitride: A New Material for High Efficiency, Compact, 1550nm Laser-Based Terahertz Sources in Chemical and Biological Detection", International Journal of High Speed Electronics and Systems, vol. 18, no. 01: World Scientific, pp. 3–9, 2008.
King, PDC., TD. Veal, CS. Gallinat, G. Koblmüller, LR. Bailey, JS. Speck, and CF. McConville, "Influence of growth conditions and polarity on interface-related electron density in InN", Journal of Applied Physics, vol. 104, no. 10: AIP, pp. 103703, 2008.
Keller, S., CS. Suh, NA. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, SP. DenBaars, JS. Speck, et al., "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093510, 2008.
Keller, S., CS. Suh, NA. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, SP. DenBaars, JS. Speck, et al., "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093510, 2008.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "InGaN/GaN laser diodes on semipolar (10$$\backslash$bar 1$ $$\backslash$bar 1$) bulk GaN substrates", physica status solidi (c), vol. 5, no. 6: WILEY-VCH Verlag, pp. 2108–2110, 2008.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "InGaN/GaN laser diodes on semipolar (10$$\backslash$bar 1$ $$\backslash$bar 1$) bulk GaN substrates", physica status solidi (c), vol. 5, no. 6: WILEY-VCH Verlag, pp. 2108–2110, 2008.
Chern-Metcalfe, GD., ED. Readinger, H. Shen, M. Wraback, G. Koblmüller, CS. Gallinat, and JS. Speck, "Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1846–1848, 2008.
Chern-Metcalfe, GD., ED. Readinger, H. Shen, M. Wraback, G. Koblmüller, CS. Gallinat, and JS. Speck, "Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1846–1848, 2008.
Kim, K-C., M. C. Schmidt, F. Wu, M. B. McLaurin, A. Hirai, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
Kim, K-C., M. C. Schmidt, F. Wu, M. B. McLaurin, A. Hirai, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
Ive, T., T. Ben-Yaacov, A. Murai, H. Asamizu, CG. Van de Walle, U. Mishra, SP. DenBaars, and JS. Speck, "Metalorganic chemical vapor deposition of ZnO (0001) thin films on GaN (0001) templates and ZnO (0001) substrates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 3091–3094, 2008.
Choi, Y-S., M. Iza, G. Koblmüller, C. Hurni, J. S. Speck, C. Weisbuch, and E. L. Hu, "Microcavity InGaN light emitting diodes with a single Fabry-Pérot mode", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 2306–2308, 2008.
Koblmüller, G., A. Hirai, F. Wu, CS. Gallinat, GD. Metcalfe, H. Shen, M. Wraback, and JS. Speck, "Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN", Applied Physics Letters, vol. 93, no. 17: AIP, pp. 171902, 2008.
Koblmüller, G., A. Hirai, F. Wu, CS. Gallinat, GD. Metcalfe, H. Shen, M. Wraback, and JS. Speck, "Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN", Applied Physics Letters, vol. 93, no. 17: AIP, pp. 171902, 2008.
Schaake, C. A., N. A. Fichtenbaum, C. J. Neufeld, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 2963–2965, 2008.
Schaake, C. A., N. A. Fichtenbaum, C. J. Neufeld, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 2963–2965, 2008.
Fehlberg, T. B., G. Koblmüller, G. A. Umana-Membreno, C. S. Gallinat, B. D. Nener, J. S. Speck, and G. Parish, "Multiple carrier transport in N-face indium nitride", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 907–909, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.

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