Publications

Found 2098 results
Author Title Type [ Year(Desc)]
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2002
Andrews, AM., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
Hansen, M., P. Fini, M. Craven, B. Heying, JS. Speck, and SP. DenBaars, "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN", Journal of crystal growth, vol. 234, no. 4: North-Holland, pp. 623–630, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO 3 thin films", IEEE Microwave and wireless components letters, vol. 12, no. 7: IEEE, pp. 237–239, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180/spl deg/high performance phase shifter using (Ba, Sr) TiO/sub 3/thin films", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 3: IEEE, pp. 1467–1469, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180º high performance phase shifter using (BaSr)TiO3 thin films", 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), June, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Nonpolar (11&1macr; 0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr; 02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 541–544, 2002.
Ullrich, A., W. Pompe, J. S. Speck, and AE. Romanov, "Peculiarities of domain patterns in epitaxially grown ferroelectric thin films", Solid State Phenomena, vol. 87: Trans Tech Publications, pp. 245–254, 2002.
Goldhahn, R., C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, UK. Mishra, et al., "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 713–716, 2002.
Goldhahn, R., C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, UK. Mishra, et al., "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 713–716, 2002.
Goldhahn, R., C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, UK. Mishra, et al., "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 713–716, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "Proceedings Symposium H," GaN & Related Compounds". E-MRS Spring Meeting.", E-MRS Spring Meeting. Symposium H," GaN & Related Compounds"., vol. 93, no. 1-3: Elsevier Science BV, pp. 1–245, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "Proceedings Symposium H," GaN & Related Compounds". E-MRS Spring Meeting.", E-MRS Spring Meeting. Symposium H," GaN & Related Compounds"., vol. 93, no. 1-3: Elsevier Science BV, pp. 1–245, 2002.
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
Miller, EJ., DM. Schaadt, ET. Yu, C. Poblenz, C. Elsass, and JS. Speck, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
Miller, EJ., DM. Schaadt, ET. Yu, C. Poblenz, C. Elsass, and JS. Speck, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
Haus, E., IP. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, UK. Mishra, and JS. Speck, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
Haus, E., IP. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, UK. Mishra, and JS. Speck, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
McCarthy, LS., IP. Smorchkova, P. Fini, MJW. Rodwell, J. Speck, SP. DenBaars, and UK. Mishra, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
McCarthy, LS., IP. Smorchkova, P. Fini, MJW. Rodwell, J. Speck, SP. DenBaars, and UK. Mishra, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire", Applied Physics Letters, vol. 81, no. 3: AIP, pp. 469–471, 2002.

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