Publications
Found 384 results
Author Title Type [ Year
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, "Elastic energy release due to domain formation in the strained epitaxy of ferroelectric and ferroelastic films", Journal of Applied Physics, vol. 74, no. 10: AIP, pp. 6012–6019, 1993.
, "Energy Release Due to Domain Formation in the Strained Epitaxy of Multivariant Films", MRS Online Proceedings Library Archive, vol. 310: Cambridge University Press, 1993.
, "Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory", Journal of applied physics, vol. 76, no. 1: AIP, pp. 466–476, 1994.
, "Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations", Journal of applied physics, vol. 78, no. 3: AIP, pp. 1696–1706, 1995.
, "An approach to threading dislocation ëëreaction kineticsíí", Applied physics letters, vol. 69, no. 22: AIP, pp. 3342–3344, 1996.
, "Modeling of threading dislocation density reduction in heteroepitaxial layers I. Geometry and crystallography", physica status solidi (b), vol. 198, no. 2: WILEY-VCH Verlag, pp. 599–613, 1996.
, "Relative coherency strain and phase transformation history in epitaxial ferroelectric thin films", Journal of applied physics, vol. 79, no. 3: AIP, pp. 1405–1415, 1996.
, "Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers", Journal of applied physics, vol. 80, no. 7: AIP, pp. 3808–3816, 1996.
, "Theory of microstructure and mechanics of the... a 1/a 2/a 1/a 2... domain pattern in epitaxial ferroelectric and ferroelastic films", Journal of applied physics, vol. 79, no. 8: AIP, pp. 4037–4049, 1996.
, "Computer simulation of threading dislocation density reduction in heteroepitaxial layers", Philosophical Magazine A, vol. 76, no. 4: Taylor & Francis, pp. 807–835, 1997.
, "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
, "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
, "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
, "A theoretical model for threading dislocation reduction during selective area growth", Materials Science and Engineering: A, vol. 234: Elsevier, pp. 794–797, 1997.
, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied Physics Letters, vol. 73, no. 21: New York [etc.] American Institute of Physics., pp. 3090–3092, 1998.
, "Domain pattern formation in epitaxial ferroelectric films", Integrated Ferroelectrics, vol. 20, no. 1-4: Taylor & Francis, pp. 67–68, 1998.
, "Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2754–2765, 1998.
, "Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2742–2753, 1998.
, "Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments", Journal of applied physics, vol. 83, no. 5: AIP, pp. 2742–2753, 1998.
, "Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied physics letters, vol. 73, no. 21: AIP, pp. 3090–3092, 1998.
, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
, "Chapter 5: Field Effect Transistors (FETs and HEMTs)-First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 177–184, 1999.
, "Domain patterns in (111) oriented tetragonal ferroelectric films", physica status solidi (a), vol. 172, no. 1: WILEY-VCH Verlag Berlin, pp. 225–253, 1999.
, "Erratum:ìMorphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphireî[Appl. Phys. Lett. 73, 3090 (1998)]", Applied Physics Letters, vol. 74, no. 10: AIP, pp. 1498–1498, 1999.
, "First demonstration of a periodically loaded line phase shifter using BST capacitors", MRS Online Proceedings Library Archive, vol. 603: Cambridge University Press, 1999.