Publications

Found 645 results
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2016
Mughal, AJ., S. Oh, A. Myzaferi, S. Nakamura, JS. Speck, and SP. DenBaars, "High-power LEDs using Ga-doped ZnO current-spreading layers", Electronics Letters, vol. 52, no. 4: IET Digital Library, pp. 304–306, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth", Optics express, vol. 24, no. 18: Optical Society of America, pp. 20281–20286, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth", Optics express, vol. 24, no. 18: Optical Society of America, pp. 20281–20286, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High-speed performance of III-nitride 410 nm ridge laser diode on (202Ø1Ø) plane for visible light communication", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–2, 2016.
Yonkee, B. P., E. C. Young, J. T. Leonard, C. Lee, S. Ho Oh, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Young, E. C., B. P. Yonkee, F. Wu, S. Ho Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Hybrid tunnel junction contacts to III–nitride light-emitting diodes", Applied Physics Express, vol. 9, no. 2: IOP Publishing, pp. 022102, 2016.
Sintonen, S., P. Kivisaari, S. Pimputkar, S. Suihkonen, T. Schulz, J. S. Speck, and S. Nakamura, "Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN", Journal of Crystal Growth, vol. 456: North-Holland, pp. 43–50, 2016.
Suihkonen, S., S. Pimputkar, J. S. Speck, and S. Nakamura, "Infrared absorption of hydrogen-related defects in ammonothermal GaN", Applied Physics Letters, vol. 108, no. 20: AIP Publishing, pp. 202105, 2016.
Eisele, H., J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, et al., "Intrinsic electronic properties of high-quality wurtzite InN", Physical Review B, vol. 94, no. 24: American Physical Society, pp. 245201, 2016.
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift", Physical Review B, vol. 93, no. 4: APS, pp. 045203, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, H. Albrithen, S. Suihkonen, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part I: System development", Journal of Crystal Growth, vol. 456: North-Holland, pp. 58–66, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes", Journal of Crystal Growth, vol. 456: North-Holland, pp. 67–72, 2016.
Leonard, JT., BP. Yonkee, DA. Cohen, L. Megalini, S. Lee, JS. Speck, SP. DenBaars, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture", Applied Physics Letters, vol. 108, no. 3: AIP Publishing, pp. 031111, 2016.
Hwang, D., B. P. Yonkee, B. Saif Addin, R. M. Farrell, S. Nakamura, J. S. Speck, and S. DenBaars, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2016.
Young, NG., RM. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, SP. DenBaars, C. Weisbuch, and JS. Speck, "Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes", Applied Physics Letters, vol. 108, no. 6: AIP Publishing, pp. 061105, 2016.
Mensi, M. D., D. L. Becerra, R. Ivanov, S. Marcinkevičius, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Properties of near-field photoluminescence in green emitting single and multiple semipolar (20< span style=", Optical Materials Express, vol. 6, no. 1: Optical Society of America, pp. 39–45, 2016.
Pimputkar, S., S. Nakamura, and J. S. Speck, Reactor vessels for ammonothermal and flux-based growth of group-iii nitride crystals, 2016.
Oh, S. Ho, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to 1 W", Applied Physics Express, vol. 9, no. 10: IOP Publishing, pp. 102102, 2016.
Yonkee, BP., EC. Young, SP. DenBaars, S. Nakamura, and JS. Speck, "Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction", Applied Physics Letters, vol. 109, no. 19: AIP Publishing, pp. 191104, 2016.
Lee, S., S. Mishkat-Ul-Masabih, J. T. Leonard, D. F. Feezell, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser", Applied Physics Express, vol. 10, no. 1: IOP Publishing, pp. 011001, 2016.

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