Publications
Found 57 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is J [Clear All Filters]
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry", MRS Online Proceedings Library Archive, vol. 449: Cambridge University Press, 1996.
, "Controlled ordering and positioning of InAs self-assembled quantum dots", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2193–2196, 2000.
, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Quantum Dots and Self-Assembled Interface Structures-Controlled ordering and positioning of InAs", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2193–2196, 2000.
, "Self-assembled quantum dot lattices and spectroscopy of single quantum dot molecules.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 220: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U233–U233, 2000.
, "Step bunching on the vicinal GaN (0001) surface", Physical Review B, vol. 62, no. 16: APS, pp. R10661, 2000.
, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
, Heteroepitaxy on Compliant Substrates for Vertical and Horizontal Integration of Multi-Functional Devices: DTIC Document, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part A. 1)-GaN-based transistors-AlGaN/GaN HEMT Optimization", Physica Status Solidi-A-Applied Research, vol. 188, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 199–202, 2001.
, "Strain-engineered self-assembled semiconductor quantum dot lattices", Applied Physics Letters, vol. 78, no. 1: AIP, pp. 105–107, 2001.
, "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.
, "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
, "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
, "Growth and magnetic properties of (Ga, Mn) As as digital ferromagnetic heterostructures", Materials Science and Engineering: B, vol. 88, no. 2-3: Elsevier, pp. 209–212, 2002.
, "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
, "Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN", physica status solidi (c), no. 7: Wiley Online Library, pp. 2339–2342, 2003.
, "Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN", Physical Review B, vol. 67, no. 15: APS, pp. 153306, 2003.
, "Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors", APS March Meeting Abstracts, 2003.
, "Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (4", Physical Review-Section B-Condensed Matter, vol. 67, no. 15: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 153306–153306, 2003.
, "Formation and reduction of pyramidal hillocks on m-plane ${$1 1 00$}$ GaN", Applied Physics Letters, vol. 91, no. 19: AIP, pp. 191906, 2007.