Publications

Found 631 results
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2013
Holder, C., D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Vertical-Cavity Surface-Emitting Lasers XVII, vol. 8639: International Society for Optics and Photonics, pp. 863906, 2013.
Hardy, M., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar (202Ø1) InGaN/GaN Laser Diodes", CLEO: Science and Innovations: Optical Society of America, pp. CF1F–1, 2013.
Hardy, M., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar (202Ø1) InGaN/GaN Laser Diodes", CLEO: Science and Innovations: Optical Society of America, pp. CF1F–1, 2013.
Hardy, M. T., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Hardy, M. T., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Kawaguchi, Y., S-C. Huang, R. M. Farrell, Y. Zhao, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
Dasgupta, S., J. Lu, A. Raman, C. Hurni, G. Gupta, J. S. Speck, U. K. Mishra, and others, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2013.
Haskell, B. A., P. T. Fini, S. Matsuda, M. D. Craven, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of planar, non-polar, group-III nitride films, 2013.
Young, NG., RM. Farrell, YL. Hu, Y. Terao, M. Iza, S. Keller, SP. DenBaars, S. Nakamura, and JS. Speck, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region, apr # " 25", 2013.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region, apr # " 25", 2013.
Hardy, M. T., C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
Hardy, M. T., C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
D'evelyn, M. P., J. Speck, W. Houck, M. Schmidt, and A. Chakraborty, Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices, 2013.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, 2013.
Farrell, RM., DA. Haeger, K. Fujito, SP. DenBaars, S. Nakamura, and JS. Speck, "Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates", Journal of Applied Physics, vol. 113, no. 6: AIP, pp. 063504, 2013.
Tamboli, A., E. L. Hu, and J. S. Speck, Photoelectrochemical etching for chip shaping of light emitting diodes, 2013.
Metcalfe, G., N. Woodward, H. Shen, M. Wraback, P. Shan Hsu, and J. Speck, "Photoreflectance and Strain Relaxation Studies of Semipolar InGaN", APS Meeting Abstracts, 2013.
Pourhashemi, A., RM. Farrell, MT. Hardy, PS. Hsu, KM. Kelchner, JS. Speck, SP. DenBaars, and S. Nakamura, "Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151112, 2013.
Pourhashemi, A., RM. Farrell, MT. Hardy, PS. Hsu, KM. Kelchner, JS. Speck, SP. DenBaars, and S. Nakamura, "Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151112, 2013.
Bryant, B. N., A. Hirai, E. C. Young, S. Nakamura, and J. S. Speck, "Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy", Journal of Crystal Growth, vol. 369: Elsevier, pp. 14–20, 2013.
Speck, J. S., E. L. Hu, C. C. A. Weisbuch, Y. Seok Choi, G. Koblmüller, M. Iza, and C. Hurni, SELECTIVE DRY ETCHING OF N-FACE (Al, In, Ga) N HETEROSTRUCTURES, apr # " 25", 2013.
Speck, J. S., E. L. Hu, C. C. A. Weisbuch, Y. Seok Choi, G. Koblmüller, M. Iza, and C. Hurni, SELECTIVE DRY ETCHING OF N-FACE (Al, In, Ga) N HETEROSTRUCTURES, apr # " 25", 2013.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2013.

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