Publications

Found 548 results
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2013
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
Haskell, B. A., P. T. Fini, S. Matsuda, M. D. Craven, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of planar, non-polar, group-III nitride films, 2013.
Nakamura, S., S. P. DenBaars, D. F. Feezell, J. S. Speck, C-C. Pan, and S. Tanaka, High output power, high efficiency blue light-emitting diodes, nov # " 14", 2013.
Young, NG., RM. Farrell, YL. Hu, Y. Terao, M. Iza, S. Keller, SP. DenBaars, S. Nakamura, and JS. Speck, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
Zhang, Z., AR. Arehart, E. Cinkilic, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, JS. Speck, and SA. Ringel, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
Hardy, M. T., C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Nakamura, S., S. P. DenBaars, D. F. Feezell, J. S. Speck, and C-C. Pan, Light-emitting diodes with low temperature dependence, 2013.
Farrell, RM., DA. Haeger, K. Fujito, SP. DenBaars, S. Nakamura, and JS. Speck, "Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates", Journal of Applied Physics, vol. 113, no. 6: AIP, pp. 063504, 2013.
Farrell, RM., DA. Haeger, K. Fujito, SP. DenBaars, S. Nakamura, and JS. Speck, "Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates", Journal of Applied Physics, vol. 113, no. 6: AIP, pp. 063504, 2013.
Wong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, et al., "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.
Zhao, Y., Q. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical polarization characteristics of semipolar (303\= 1) and (303\= 1\=) InGaN/GaN light-emitting diodes", Optics express, vol. 21, no. 101: Optical Society of America, pp. A53–A59, 2013.
Zhao, Y., Q. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical polarization characteristics of semipolar (303\= 1) and (303\= 1\=) InGaN/GaN light-emitting diodes", Optics express, vol. 21, no. 101: Optical Society of America, pp. A53–A59, 2013.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Optimization of annealing process for improved InGaN solar cell performance", Journal of electronic materials, vol. 42, no. 12: Springer US, pp. 3467–3470, 2013.
Farrell, R. M., M. C. Schmidt, K. Choong Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2013.
Farrell, R. M., M. C. Schmidt, K. Choong Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2013.
Chen, J., Y. S. Puzyrev, C. Xuan Zhang, E. Xia Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, et al., "Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 60, no. 6: IEEE, pp. 4080–4086, 2013.
Pourhashemi, A., RM. Farrell, MT. Hardy, PS. Hsu, KM. Kelchner, JS. Speck, SP. DenBaars, and S. Nakamura, "Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151112, 2013.
Feezell, D. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar $(${$$\backslash$hbox ${$20$}$$}$$\backslash$bar ${$${$$\backslash$hbox ${$2$}$$}$$}$$\backslash$bar ${$${$$\backslash$hbox ${$1$}$$}$$}$) $ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting", Journal of Display Technology, vol. 9, no. 4: IEEE, pp. 190–198, 2013.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2013.
Connelly, B. C., N. T. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Zhao, Y., F. Wu, C-Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Suppressing void defects in long wavelength semipolar (20 2 1) InGaN quantum wells by growth rate optimization", Applied Physics Letters, vol. 102, no. 9: AIP, pp. 091905, 2013.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamua, Technique for the growth of planar semi-polar gallium nitride, sep # " 3", 2013.

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