Publications

Found 548 results
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2016
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Hwang, D., B. P. Yonkee, B. Saif Addin, R. M. Farrell, S. Nakamura, J. S. Speck, and S. DenBaars, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.
Young, NG., RM. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, SP. DenBaars, C. Weisbuch, and JS. Speck, "Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes", Applied Physics Letters, vol. 108, no. 6: AIP Publishing, pp. 061105, 2016.
Oh, S. Ho, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to 1 W", Applied Physics Express, vol. 9, no. 10: IOP Publishing, pp. 102102, 2016.
Lee, S., S. Mishkat-Ul-Masabih, J. T. Leonard, D. F. Feezell, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser", Applied Physics Express, vol. 10, no. 1: IOP Publishing, pp. 011001, 2016.
Fortunato, E., B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2016.
Jiang, R., E. Xia Zhang, X. Shen, J. Chen, K. Ni, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
Myzaferi, A., AH. Reading, DA. Cohen, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes", Applied Physics Letters, vol. 109, no. 6: AIP Publishing, pp. 061109, 2016.
Kowsz, S., C. Pynn, R. Farrell, J. Speck, S. DenBaars, and S. Nakamura, "Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
2017
Foronda, H. M., B. Mazumder, E. C. Young, M. A. Laurent, Y. Li, S. P. DenBaars, and J. S. Speck, "Analysis of Vegardís law for lattice matching InxAl1- xN to GaN by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 475: North-Holland, pp. 127–135, 2017.
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. E. Cohen, J. S. Speck, and C. Weisbuch, "Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation)", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101040L, 2017.
Mazumder, B., S. Broderick, K. Rajan, J. Peralta, H. Foronda, and J. S. Speck, "Field Evaporation Behavior of Ternary Compound Semiconductor In x Al ix N", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 636–637, 2017.
Sun, W., Z. Zhang, T. Mohsin, E. Farzana, B. McSkimming, C. Lee, P. Saunier, J. Speck, SA. Ringel, and AR. Arehart, GENERAL MODEL FOR IRRADIATION-INDUCED DEGRADATION OF GaN HEMTS, 2017.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, "Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors", Optics express, vol. 25, no. 15: Optical Society of America, pp. 17480–17487, 2017.
Piccardo, M., C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, M. Filoche, L. Martinelli, J. Peretti, and C. Weisbuch, "Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144205, 2017.
Piccardo, M., C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, M. Filoche, L. Martinelli, J. Peretti, and C. Weisbuch, "Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144205, 2017.
Li, C-K., M. Piccardo, L-S. Lu, S. Mayboroda, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch, M. Filoche, and Y-R. Wu, "Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144206, 2017.
Forman, C. A., S. Lee, E. C. Young, J. T. Leonard, D. A. Cohen, B. P. Yonkee, T. Margalith, R. M. Farrell, S. P. DenBaars, J. S. Speck, et al., "Nonpolar GaN-based vertical-cavity surface-emitting lasers", Photonics Conference (IPC), 2017 IEEE: IEEE, pp. 233–234, 2017.
Forman, C. A., S. Lee, E. C. Young, J. T. Leonard, D. A. Cohen, B. P. Yonkee, T. Margalith, R. M. Farrell, S. P. DenBaars, J. S. Speck, et al., "Nonpolar GaN-based vertical-cavity surface-emitting lasers", Photonics Conference (IPC), 2017 IEEE: IEEE, pp. 233–234, 2017.
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.
Böer, K. Wolfgang, M. S. Brandt, M. J. Caldas, Z. Cao, P. Deák, D. A. Drabold, A. L. Efros, C. Felser, E. Fortunato, B. Gil, et al., Stefan Hildebrandt, 2017.
Böer, K. Wolfgang, M. S. Brandt, M. J. Caldas, Z. Cao, P. Deák, D. A. Drabold, A. L. Efros, C. Felser, E. Fortunato, B. Gil, et al., Stefan Hildebrandt, 2017.
Fireman, M. N., B. Bonef, E. C. Young, N. Nookala, M. A. Belkin, and J. S. Speck, "Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 122, no. 7: AIP Publishing, pp. 075105, 2017.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, 2017.

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