Publications

Found 548 results
Author Title Type [ Year(Desc)]
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2010
Matioli, E., E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, "High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals", Applied physics letters, vol. 96, no. 3: AIP, pp. 031108, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, et al., "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Gallium Nitride Materials and Devices V, vol. 7602: International Society for Optics and Photonics, pp. 760218, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations", Applied physics express, vol. 3, no. 10: IOP Publishing, pp. 101002, 2010.
Farrell, RM., PS. Hsu, DA. Haeger, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231113, 2010.
Farrell, RM., PS. Hsu, DA. Haeger, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231113, 2010.
Matioli, E., B. Fleury, E. Rangel, E. Hu, J. Speck, and C. Weisbuch, "Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes", Journal of applied physics, vol. 107, no. 5: AIP, pp. 053114, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Farrell, RM., DA. Haeger, X. Chen, CS. Gallinat, RW. Davis, M. Cornish, K. Fujito, S. Keller, SP. DenBaars, S. Nakamura, et al., "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
Farrell, RM., DA. Haeger, X. Chen, CS. Gallinat, RW. Davis, M. Cornish, K. Fujito, S. Keller, SP. DenBaars, S. Nakamura, et al., "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, no. 8, 2010.
Huang, C-Y., A. Tyagi, Y-. Da Lin, M. T. Hardy, P. Shan Hsu, K. Fujito, J-S. Ha, H. Ohta, J. S. Speck, S. P. DenBaars, et al., "Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122)(Al, In, Ga) N waveguide structures", Japanese Journal of Applied Physics, vol. 49, no. 1R: IOP Publishing, pp. 010207, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y-C. Chang, D. F. Feezell, R. Craig, et al., "State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Laser Technology for Defense and Security VI, vol. 7686: International Society for Optics and Photonics, pp. 76860L, 2010.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, 2010.
2011
Roy, T., Y. S. Puzyrev, E. Xia Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, "1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions", Microelectronics Reliability, vol. 51, no. 2: Pergamon, pp. 212–216, 2011.
Roy, T., Y. S. Puzyrev, E. Xia Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, "1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions", Microelectronics Reliability, vol. 51, no. 2: Pergamon, pp. 212–216, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.

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