Publications

Found 548 results
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2009
Tyagi, A., R. M. Farrell, K. M. Kelchner, C-Y. Huang, P. Shan Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm", Applied Physics Express, vol. 3, no. 1: IOP Publishing, pp. 011002, 2009.
Da Lin, Y-., M. T. Hardy, P. Shan Hsu, K. M. Kelchner, C-Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, et al., "Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate", Applied physics express, vol. 2, no. 8: IOP Publishing, pp. 082102, 2009.
Da Lin, Y-., M. T. Hardy, P. Shan Hsu, K. M. Kelchner, C-Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, et al., "Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate", Applied physics express, vol. 2, no. 8: IOP Publishing, pp. 082102, 2009.
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
Fujiwara, T., S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
Zhong, H., A. Tyagi, N. Pfaff, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Enhancing the light extraction efficiency of blue semipolar (1011) nitride-based light emitting diodes through surface patterning", Japanese Journal of Applied Physics, vol. 48, no. 3R: IOP Publishing, pp. 030201, 2009.
Hardy, M. T., K. M. Kelchner, Y-. Da Lin, P. Shan Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, "m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching", Applied Physics Express, vol. 2, no. 12: IOP Publishing, pp. 121004, 2009.
Da Lin, Y-., C-Y. Huang, M. T. Hardy, P. Shan Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "m-plane pure blue laser diodes with p-GaN", Applied physics letters, vol. 95, no. 8: American Institute of Physics, 2009.
Da Lin, Y-., C-Y. Huang, M. T. Hardy, P. Shan Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers", Applied Physics Letters, vol. 95, no. 8: AIP, pp. 081110, 2009.
Kelchner, K. M., Y-. Da Lin, M. T. Hardy, C. Yen Huang, P. Shan Hsu, R. M. Farrell, D. A. Haeger, H. Chih Kuo, F. Wu, K. Fujito, et al., "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
Kelchner, K. M., Y-. Da Lin, M. T. Hardy, C. Yen Huang, P. Shan Hsu, R. M. Farrell, D. A. Haeger, H. Chih Kuo, F. Wu, K. Fujito, et al., "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
Xu, G., Y. J. Ding, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN", International Quantum Electronics Conference: Optical Society of America, pp. IMH6, 2009.
Tyagi, A., F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (11 2\= 2) GaN free standing substrates", Applied Physics Letters, vol. 95, no. 25: AIP, pp. 251905, 2009.
Masui, H., M. Schmidt, N. Fellows, H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Recent progress in nonpolar LEDs as polarized light emitters", physica status solidi (a), vol. 206, no. 2: Wiley Online Library, pp. 203–205, 2009.
Fujiwara, T., S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors", Applied physics express, vol. 2, no. 6: IOP Publishing, pp. 061003, 2009.
Xu, G., Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, et al., "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
2010
Tyagi, A., R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm", Applied Physics Express, vol. 3, pp. 011002, 2010.
Tyagi, A., R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm", Applied Physics Express, vol. 3, pp. 011002, 2010.
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Farrell, RM., DA. Haeger, X. Chen, M. Iza, A. Hirai, KM. Kelchner, K. Fujito, A. Chakraborty, S. Keller, SP. DenBaars, et al., "Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes", Journal of Crystal Growth, vol. 313, no. 1: Elsevier, pp. 1–7, 2010.
Farrell, RM., DA. Haeger, X. Chen, M. Iza, A. Hirai, KM. Kelchner, K. Fujito, A. Chakraborty, S. Keller, SP. DenBaars, et al., "Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes", Journal of Crystal Growth, vol. 313, no. 1: Elsevier, pp. 1–7, 2010.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2010.
Matioli, E., B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, "High extraction efficiency GaN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals", Applied physics express, vol. 3, no. 3: IOP Publishing, pp. 032103, 2010.

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