Publications

Found 13 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is E and Author is Elsass, CR  [Clear All Filters]
1998
Wu, XH., CR. Elsass, A. Abare, M. Mack, S. Keller, PM. Petroff, SP. DenBaars, JS. Speck, and SJ. Rosner, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
1999
Heying, B., EJ. Tarsa, CR. Elsass, P. Fini, SP. DenBaars, and JS. Speck, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
Elsass, CR., IP. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, JP. Ibbetson, S. Keller, PM. Petroff, SP. DenBaars, et al., "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of applied physics, vol. 86, no. 8: AIP, pp. 4520–4526, 1999.
2000
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Elhamri, S., A. Saxler, D. Cull, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, C. Poblenz, P. Fini, S. Keller, et al., "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
Elhamri, S., A. Saxler, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, JP. Ibbetson, S. Keller, et al., "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
Smorchkova, IP., S. Keller, S. Heikman, CR. Elsass, B. Heying, P. Fini, JS. Speck, and UK. Mishra, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
2001
Elsass, CR., C. Poblenz, B. Heying, P. Fini, PM. Petroff, SP. DenBaars, UK. Mishra, and JS. Speck, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
Smith, KV., ET. Yu, CR. Elsass, B. Heying, and JS. Speck, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy", Applied Physics Letters, vol. 79, no. 17: AIP, pp. 2749–2751, 2001.
2009
Akopian, N., A. Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, CR. Elsass, IP. Smorchkova, and JS. Speck, "Fermi edge singularity observed in GaN/AlGaN heterointerfaces", Applied Physics Letters, vol. 94, no. 22: AIP, pp. 223502, 2009.