Publications

Found 301 results
Author Title Type [ Year(Desc)]
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2001
Link, A., O. Ambacher, IP. Smorchkova, U. K. Mishra, J. S. Speck, M. Stutzmann, and others, "Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures", Materials Science Forum, vol. 353: Trans Tech Publications Ltd., Zurich-Uetikon, Switzerland, pp. 787–790, 2001.
Thompson, C., GB. Stephenson, JA. Eastman, A. Munkholm, O. Auciello, MV. Ramana Murty, P. Fini, SP. DenBaars, and JS. Speck, "Investigations of chemical vapor deposition of GaN using synchrotron radiation", Journal of the Electrochemical Society, vol. 148, no. 5: The Electrochemical Society, pp. C390–C394, 2001.
Mathis, SK., KHA. Lau, AM. Andrews, EM. Hall, G. Almuneau, EL. Hu, and JS. Speck, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
Mathis, SK., KHA. Lau, AM. Andrews, EM. Hall, G. Almuneau, EL. Hu, and JS. Speck, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
Marso, M., P. Javorka, A. Alam, M. Wolter, H. Hardtdegen, A. Fox, M. Heuken, P. Kordos, and H. Luth, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part A. 1)-GaN-based transistors-AlGaN/GaN HEMT Optimization", Physica Status Solidi-A-Applied Research, vol. 188, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 199–202, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
Acikel, B., Y. Liu, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Phase shifters using (Ba, Sr) TiO/sub 3/thin films on sapphire and glass substrates", Microwave Symposium Digest, 2001 IEEE MTT-S International, vol. 2: IEEE, pp. 1191–1194, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 603–606, 2001.
Acikel, B., P. J. Hansen, T. R. Taylor, A. S. Nagra, J. S. Speck, and R. A. York, "Tunable strontium titanate thin films for microwave devices", Integrated Ferroelectrics, vol. 39, pp. 291-298, 2001.
2002
Andrews, AM., and JS. Speck, "Antimony segregation in the oxidation of strained AlAsSb interlayers", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 181–182, 2002.
Andrews, AM., and JS. Speck, "Crosshatch surface morphology in mismatched films", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 23–24, 2002.
Shokhovets, S., R. Goldhahn, G. Gobsch, O. Ambacher, IP. Smorchkova, JS. Speck, U. Mishra, A. Link, M. Hermann, and M. Eickhoff, "Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures", MRS Online Proceedings Library Archive, vol. 743: Cambridge University Press, 2002.
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JM. Stephens, JS. Speck, AC. Gossard, and DD. Awschalom, "Growth and magnetic properties of (Ga, Mn) As as digital ferromagnetic heterostructures", Materials Science and Engineering: B, vol. 88, no. 2-3: Elsevier, pp. 209–212, 2002.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, UK. Mishra, SP. DenBaars, JS. Speck, and SA. Ringel, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 80, no. 5: AIP, pp. 805–807, 2002.
Taylor, TR., PJ. Hansen, B. Acikel, N. Pervez, RA. York, SK. Streiffer, and JS. Speck, "Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films", Applied Physics Letters, vol. 80, no. 11: AIP, pp. 1978–1980, 2002.
Andrews, AM., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO 3 thin films", IEEE Microwave and wireless components letters, vol. 12, no. 7: IEEE, pp. 237–239, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180/spl deg/high performance phase shifter using (Ba, Sr) TiO/sub 3/thin films", Microwave Symposium Digest, 2002 IEEE MTT-S International, vol. 3: IEEE, pp. 1467–1469, 2002.
Acikel, B., T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "A new X-band 180º high performance phase shifter using (BaSr)TiO3 thin films", 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), June, 2002.
Goldhahn, R., C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, UK. Mishra, et al., "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 713–716, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "Proceedings Symposium H," GaN & Related Compounds". E-MRS Spring Meeting.", E-MRS Spring Meeting. Symposium H," GaN & Related Compounds"., vol. 93, no. 1-3: Elsevier Science BV, pp. 1–245, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Link, A., T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
Serraiocco, J., B. Acikel, P. Hansen, T. Taylor, H. Xu, JS. Speck, and RA. York, "Tunable passive integrated circuits using BST thin films", Integrated Ferroelectrics, vol. 49, no. 1: Taylor & Francis, pp. 161–170, 2002.

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