Publications

Found 651 results
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2006
Chakraborty, A., B. A. Haskell, H. Masui, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.
Keller, S., C. Schaake, NA. Fichtenbaum, CJ. Neufeld, Y. Wu, K. McGroddy, A. David, SP. DenBaars, C. Weisbuch, JS. Speck, et al., "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.
Ghosh, S., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1441–1445, 2006.
Paskov, PP., T. Paskova, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Optical properties of nonpolar a-plane GaN layers", Superlattices and Microstructures, vol. 40, no. 4-6: Academic Press, pp. 253–261, 2006.
Hashimoto, T., K. Fujito, R. Sharma, E. R. Letts, P. T. Fini, J. S. Speck, and S. Nakamura, "Phase selection of microcrystalline GaN synthesized in supercritical ammonia", Journal of crystal growth, vol. 291, no. 1: Elsevier, pp. 100–106, 2006.
Haskell, B. A., C. G. Van de Walle, J. S. Speck, and S. Nakamura, PI: Dr. Paul T. Fini, 2006.
Misra, P., U. Behn, O. Brandt, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy", Applied physics letters, vol. 88, no. 16: AIP, pp. 161920, 2006.
Koyama, T., T. Onuma, H. Masui, A. Chakraborty, BA. Haskell, S. Keller, UK. Mishra, JS. Speck, S. Nakamura, SP. DenBaars, et al., "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
Kaeding, JF., H. Asamizu, H. Sato, M. Iza, TE. Mates, SP. DenBaars, JS. Speck, and S. Nakamura, "Realization of high hole concentrations in Mg doped semipolar (10 1\= 1\=) GaN", Applied physics letters, vol. 89, no. 20: AIP, pp. 202104, 2006.
Onuma, T., S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, UK. Mishra, T. Sota, and SF. Chichibu, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
Roder, C., S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
Romanov, AE., TJ. Baker, S. Nakamura, JS. Speck, and ERATO/JST. U. C. S. B. Group, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
Chakraborty, A., K. Choong Kim, F. Wu, B. A. Haskell, S. Keller, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
Dora, Y., S. Han, D. Klenov, P. J. Hansen, K-soo. No, U. K. Mishra, S. Stemmer, and J. S. Speck, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.
2005
Hashimoto, T., K. Fujito, M. Saito, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN on an over-1-inch seed crystal", Japanese journal of applied physics, vol. 44, no. 12L: IOP Publishing, pp. L1570, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on spinel substrates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L920, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Haskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
Sharma, R., PM. Pattison, H. Masui, RM. Farrell, TJ. Baker, BA. Haskell, F. Wu, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates", Japanese journal of applied physics, vol. 44, no. 1L: IOP Publishing, pp. L173, 2005.
Heikman, S., S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Hashimoto, T., K. Fujito, K. Samonji, J. S. Speck, and S. Nakamura, "Growth of AlN by the chemical vapor reaction process", Japanese journal of applied physics, vol. 44, no. 2R: IOP Publishing, pp. 869, 2005.
Hashimoto, T., K. Fujito, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth of gallium nitride via fluid transport in supercritical ammonia", Journal of Crystal Growth, vol. 275, no. 1-2: North-Holland, pp. e525–e530, 2005.
Garrett, GA., H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN", physica status solidi (a), vol. 202, no. 5: Wiley Online Library, pp. 846–849, 2005.

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