Publications

Found 651 results
Author Title Type [ Year(Asc)]
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2012
Speck, J. S., A. Tyagi, A. E. Romanov, S. Nakamura, and S. P. DenBaars, Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers, 2012.
2011
Raring, J. W., M. C. Schmidt, C. Poblenz, M. J. Mondry, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, "47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems", SID Symposium Digest of Technical Papers, vol. 42, no. 1: Wiley Online Library, pp. 677–680, 2011.
Chung, R. Byung- Kyu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Abnormal Behavior of MOCVD Grown Al x In 1-x N Observed by Various Material Characterizations", 한국재료학회, vol. 17, 10/2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals, sep # " 1", 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.
Prosa, TJ., PH. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, SP. DenBaars, S. Nakamura, and JS. Speck, "Atom probe analysis of interfacial abruptness and clustering within a single In x Ga 1- x N quantum well device on semipolar (10 1\= 1\=) GaN substrate", Applied physics letters, vol. 98, no. 19: AIP, pp. 191903, 2011.
Romanov, A. E., E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy", Journal of Applied Physics, vol. 109, no. 10: AIP, pp. 103522, 2011.
Pimputkar, S., S. Kawabata, J. Speck, and S. Nakamura, "Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystal, 2011.
Huang, C-Y., M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21) InGaN/GaN quantum wells", Applied Physics Letters, vol. 99, no. 24: AIP, pp. 241115, 2011.
Bierwagen, O., J. S. Speck, T. Nagata, T. Chikyow, Y. Yamashita, H. Yoshikawa, and K. Kobayashi, "Depletion of the In 2 O 3 (001) and (111) surface electron accumulation by an oxygen plasma surface treatment", Applied Physics Letters, vol. 98, no. 17: AIP, pp. 172101, 2011.
Farrell, RM., DA. Haeger, PS. Hsu, K. Fujito, DF. Feezell, SP. DenBaars, JS. Speck, and S. Nakamura, "Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 99, no. 17: AIP, pp. 171115, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Hardy, MT., RM. Farrell, P. S. Hsu, DA. Haeger, K. Kelchner, K. Fujito, A. Chakraborty, DA. Cohen, S. Nakamura, JS. Speck, et al., "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
Bae, SY., DS. Lee, BH. Kong, HK. Cho, JF. Kaeding, S. Nakamura, SP. DenBaars, and JS. Speck, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2011.
Kamber, D. S., S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved purity and method of producing the same, 2011.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, jun # " 7", 2011.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, 2011.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2011.
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
DenBaars, S. P., S. Nakamura, and J. S. Speck, High efficiency light emitting diode (LED), jun # " 7", 2011.
Lang, J., C. Neufeld, C. Hurni, S. Cruz, E. Matioli, U. Mishra, and J. Speck, "High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH (3)-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.

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