Publications

Found 853 results
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2010
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, et al., "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Gallium Nitride Materials and Devices V, vol. 7602: International Society for Optics and Photonics, pp. 760218, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Young, E. C., F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
Yang, CK., P. Roblin, F. De Groote, SA. Ringel, S. Rajan, JP. Teyssier, C. Poblenz, Y. Pei, J. Speck, and UK. Mishra, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations", Applied physics express, vol. 3, no. 10: IOP Publishing, pp. 101002, 2010.
Farrell, RM., PS. Hsu, DA. Haeger, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231113, 2010.
Zhong, H., J. F. Kaeding, R. Sharma, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Huang, C-Y., Y-. Da Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, vol. 107, no. 2: AIP, pp. 023101, 2010.
Huang, C-Y., Y-. Da Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, vol. 107, no. 2: AIP, pp. 023101, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Farrell, RM., DA. Haeger, X. Chen, CS. Gallinat, RW. Davis, M. Cornish, K. Fujito, S. Keller, SP. DenBaars, S. Nakamura, et al., "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
Farrell, RM., DA. Haeger, X. Chen, CS. Gallinat, RW. Davis, M. Cornish, K. Fujito, S. Keller, SP. DenBaars, S. Nakamura, et al., "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, no. 8, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, no. 8, 2010.
Shen, H., GA. Garrett, M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Polarization field crossover in semi-polar InGaN/GaN single quantum wells", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2378–2381, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Device Research Conf., 2010 Proc. Device Research Conf., 2010 155, 2010", Proc. Device Research Conf, vol. 155, 2010.
Huang, C-Y., A. Tyagi, Y-. Da Lin, M. T. Hardy, P. Shan Hsu, K. Fujito, J-S. Ha, H. Ohta, J. S. Speck, S. P. DenBaars, et al., "Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122)(Al, In, Ga) N waveguide structures", Japanese Journal of Applied Physics, vol. 49, no. 1R: IOP Publishing, pp. 010207, 2010.
Huang, C-Y., A. Tyagi, Y-. Da Lin, M. T. Hardy, P. Shan Hsu, K. Fujito, J-S. Ha, H. Ohta, J. S. Speck, S. P. DenBaars, et al., "Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122)(Al, In, Ga) N waveguide structures", Japanese Journal of Applied Physics, vol. 49, no. 1R: IOP Publishing, pp. 010207, 2010.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates", Journal of electronic materials, vol. 39, no. 5: Springer US, pp. 608–611, 2010.
Keller, S., Y. Dora, F. Wu, X. Chen, S. Chowdury, SP. DenBaars, JS. Speck, and UK. Mishra, "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition", Applied Physics Letters, vol. 97, no. 14: AIP, pp. 142109, 2010.

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