Publications

Found 522 results
Author Title Type [ Year(Desc)]
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2001
Hansen, M., LF. Chen, JS. Speck, and SP. DenBaars, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Doping of GaN with magnesium-Observation of Mg-Rich", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 353–356, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
2002
Glaser, ER., WE. Carlos, GCB. Braga, JA. Freitas Jr, WJ. Moore, BV. Shanabrook, AE. Wickenden, DD. Koleske, RL. Henry, MW. Bayerl, et al., "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.
Jimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, et al., "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
Jimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, et al., "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
Davis, R. F., A. M. Roskowski, E. A. Preble, J. S. Speck, B. Heying, J. A. Freitas, EVAN. R. Glaser, and WILLIAM. E. Carlos, "Gallium nitride materials-progress, status, and potential roadblocks", Proceedings of the IEEE, vol. 90, no. 6: IEEE, pp. 993–1005, 2002.
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JM. Stephens, JS. Speck, AC. Gossard, and DD. Awschalom, "Growth and magnetic properties of (Ga, Mn) As as digital ferromagnetic heterostructures", Materials Science and Engineering: B, vol. 88, no. 2-3: Elsevier, pp. 209–212, 2002.
Poblenz, C., T. Mates, M. Craven, SP. DenBaars, and JS. Speck, "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 81, no. 15: AIP, pp. 2767–2769, 2002.
Waltereit, P., MD. Craven, SP. DenBaars, and JS. Speck, "Investigation of the piezoelectric polarization in (In, Ga) N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 92, no. 1: AIP, pp. 456–460, 2002.
Hansen, M., LF. Chen, SH. Lim, SP. DenBaars, and JS. Speck, "Mg-rich precipitates in the p-type doping of InGaN-based laser diodes", Applied physics letters, vol. 80, no. 14: AIP, pp. 2469–2471, 2002.
Hansen, M., P. Fini, M. Craven, B. Heying, JS. Speck, and SP. DenBaars, "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN", Journal of crystal growth, vol. 234, no. 4: North-Holland, pp. 623–630, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Nonpolar (11&1macr; 0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr; 02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 541–544, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "Proceedings Symposium H," GaN & Related Compounds". E-MRS Spring Meeting.", E-MRS Spring Meeting. Symposium H," GaN & Related Compounds"., vol. 93, no. 1-3: Elsevier Science BV, pp. 1–245, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "Proceedings Symposium H," GaN & Related Compounds". E-MRS Spring Meeting.", E-MRS Spring Meeting. Symposium H," GaN & Related Compounds"., vol. 93, no. 1-3: Elsevier Science BV, pp. 1–245, 2002.
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire", Applied Physics Letters, vol. 81, no. 3: AIP, pp. 469–471, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN", Applied Physics Letters, vol. 81, no. 7: AIP, pp. 1201–1203, 2002.
Link, A., T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
2003
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.
Craven, M. D., P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.

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