Publications

Found 1586 results
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2008
King, PDC., TD. Veal, CS. Gallinat, G. Koblmüller, LR. Bailey, JS. Speck, and CF. McConville, "Influence of growth conditions and polarity on interface-related electron density in InN", Journal of Applied Physics, vol. 104, no. 10: AIP, pp. 103703, 2008.
Keller, S., CS. Suh, NA. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, SP. DenBaars, JS. Speck, et al., "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093510, 2008.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "InGaN/GaN laser diodes on semipolar (10$$\backslash$bar 1$ $$\backslash$bar 1$) bulk GaN substrates", physica status solidi (c), vol. 5, no. 6: WILEY-VCH Verlag, pp. 2108–2110, 2008.
Chern-Metcalfe, GD., ED. Readinger, H. Shen, M. Wraback, G. Koblmüller, CS. Gallinat, and JS. Speck, "Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1846–1848, 2008.
Kim, K-C., M. C. Schmidt, F. Wu, M. B. McLaurin, A. Hirai, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
Ive, T., T. Ben-Yaacov, A. Murai, H. Asamizu, CG. Van de Walle, U. Mishra, SP. DenBaars, and JS. Speck, "Metalorganic chemical vapor deposition of ZnO (0001) thin films on GaN (0001) templates and ZnO (0001) substrates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 3091–3094, 2008.
Choi, Y-S., M. Iza, G. Koblmüller, C. Hurni, J. S. Speck, C. Weisbuch, and E. L. Hu, "Microcavity InGaN light emitting diodes with a single Fabry-Pérot mode", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 2306–2308, 2008.
Lübbert, D., T. Baumbach, V. Hol\`y, P. Mikulík, L. Helfen, P. Pernot, M. Elyyan, S. Keller, TM. Katona, SP. DenBaars, et al., "Microdiffraction imaging of dislocation densities in microstructured samples", EPL (Europhysics Letters), vol. 82, no. 5: IOP Publishing, pp. 56002, 2008.
Koblmüller, G., A. Hirai, F. Wu, CS. Gallinat, GD. Metcalfe, H. Shen, M. Wraback, and JS. Speck, "Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN", Applied Physics Letters, vol. 93, no. 17: AIP, pp. 171902, 2008.
Schaake, C. A., N. A. Fichtenbaum, C. J. Neufeld, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 2963–2965, 2008.
Fehlberg, T. B., G. Koblmüller, G. A. Umana-Membreno, C. S. Gallinat, B. D. Nener, J. S. Speck, and G. Parish, "Multiple carrier transport in N-face indium nitride", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 907–909, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting", Journal of the Society for Information Display, vol. 16, no. 4: Wiley Online Library, pp. 571–578, 2008.
Masui, H., H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope", physica status solidi (a), vol. 205, no. 5: Wiley Online Library, pp. 1203–1206, 2008.
Sato, H., R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, et al., "Optical properties of yellow light-emitting diodes grown on semipolar (11 2 2) bulk GaN substrates", Applied Physics Letters, vol. 92, no. 22: AIP, pp. 221110, 2008.
Yamanaka, T., D. Alexson, M. A. Stroscio, M. Dutta, P. Petroff, J. Brown, and J. Speck, "Phonon modes in self-assembled GaN quantum dots", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093512, 2008.
Zhong, H., A. Tyagi, JS. Speck, and S. Nakamura, "Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells H. Shen, GA Garrett, and M. Wraback US Army Research Laboratory 2800 Powder Mill Road, Adelphi, MD 20783", Phys. Lett, vol. 92, pp. 221110, 2008.
Saito, M., D. S. Kamber, T. J. Baker, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Plane Dependent Growth of GaN in Supercritical Basic Ammonia", Applied physics express, vol. 1, no. 12: IOP Publishing, pp. 121103, 2008.
White, ME., MY. Tsai, F. Wu, and JS. Speck, "Plasma-assisted molecular beam epitaxy and characterization of Sn O 2 (101) on r-plane sapphire", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 26, no. 5: AVS, pp. 1300–1307, 2008.
Tsai, MY., ME. White, and JS. Speck, "Plasma-assisted molecular beam epitaxy of SnO2 on TiO2", Journal of Crystal Growth, vol. 310, no. 18: North-Holland, pp. 4256–4261, 2008.
Wong, M. Hoi, F. Wu, T. E. Mates, J. S. Speck, and U. K. Mishra, "Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093710, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
Nakamura, S., U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, et al., "Preface: phys. stat. sol.(c) 5/6", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1472–1474, 2008.
Keller, S., CS. Suh, Z. Chen, R. Chu, S. Rajan, NA. Fichtenbaum, M. Furukawa, SP. DenBaars, JS. Speck, and UK. Mishra, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 103, no. 3: AIP, pp. 033708, 2008.

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