Publications

Found 121 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Title is P  [Clear All Filters]
2002
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "Proceedings Symposium H," GaN & Related Compounds". E-MRS Spring Meeting.", E-MRS Spring Meeting. Symposium H," GaN & Related Compounds"., vol. 93, no. 1-3: Elsevier Science BV, pp. 1–245, 2002.
2003
Winzer, A. T., R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, UK. Mishra, and JS. Speck, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
Green, DS., E. Haus, F. Wu, L. Chen, UK. Mishra, and JS. Speck, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.
Wu, F., M. D. Craven, S-H. Lim, and J. S. Speck, "Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy", Journal of Applied Physics, vol. 94, pp. 942-947, 2003.
Heikman, S., S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
Jena, D., S. Heikman, A. Gossard, J. Speck, U. Mishra, A. Link, and O. Ambacher, "Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors", APS March Meeting Abstracts, 2003.
2004
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces-GaN and Related Materials-Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures", Journal of Vacuum Science and Technology-Section B, vol. 22, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2169–2174, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
2005
Masui, H., A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.
Ghosh, S., P. Misra, HT. Grahn, B. Imer, S. Nakamura, SP. DenBaars, Speck, and JS, Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire: AIP, 2005.
Chakraborty, A., S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
2006
Shu, CS., A. Chini, Y. Fu, C. Poblenz, JS. Speck, and UK. Mishra, "P-gan/algan/gan enhancement-mode hemts", 64th Device Research Conference (DRC), pp. 163–164, 2006.
Hashimoto, T., K. Fujito, R. Sharma, E. R. Letts, P. T. Fini, J. S. Speck, and S. Nakamura, "Phase selection of microcrystalline GaN synthesized in supercritical ammonia", Journal of crystal growth, vol. 291, no. 1: Elsevier, pp. 100–106, 2006.
Paskov, PP., R. Schifano, T. Malinauskas, T. Paskova, JP. Bergman, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, et al., "Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers", physica status solidi (c), vol. 3, no. 6: Wiley Online Library, pp. 1499–1502, 2006.
Haskell, B. A., C. G. Van de Walle, J. S. Speck, and S. Nakamura, PI: Dr. Paul T. Fini, 2006.
Misra, P., U. Behn, O. Brandt, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy", Applied physics letters, vol. 88, no. 16: AIP, pp. 161920, 2006.
Koyama, T., T. Onuma, H. Masui, A. Chakraborty, BA. Haskell, S. Keller, UK. Mishra, JS. Speck, S. Nakamura, SP. DenBaars, et al., "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
2007
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Complex Oxides-Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple", Journal of Vacuum Science and Technology-Section B, vol. 25, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 1524–1528, 2007.
Fujii, K., Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, et al., "Photoelectrochemical properties of nonpolar and semipolar GaN", Japanese Journal of Applied Physics, vol. 46, no. 10R: IOP Publishing, pp. 6573, 2007.
Behn, U., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy", physica status solidi (a), vol. 204, no. 1: Wiley Online Library, pp. 299–303, 2007.
Poblenz, C., A. L. Corrion, F. Recht, C. Soo Suh, R. Chu, L. Shen, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz", IEEE Electron Device Letters, vol. 28, no. 11: IEEE, pp. 945–947, 2007.
Haskell, BA., S. Nakamura, SP. DenBaars, and JS. Speck, "Progress in the growth of nonpolar gallium nitride", physica status solidi (b), vol. 244, no. 8: Wiley Online Library, pp. 2847–2858, 2007.
McLaurin, M., and J. S. Speck, "p-type conduction in stacking-fault-free m-plane GaN", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 110–112, 2007.
2008
Yamanaka, T., D. Alexson, M. A. Stroscio, M. Dutta, P. Petroff, J. Brown, and J. Speck, "Phonon modes in self-assembled GaN quantum dots", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093512, 2008.

Pages