Publications

Found 6 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James and First Letter Of Title is M  [Clear All Filters]
2016
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
2015
Kuritzky, L., D. Myers, K. Kelchner, S. Nakamura, S. DenBaars, C. Weisbuch, and J. Speck, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
2011
Hsu, P. Shan, E. Young, A. Romanov, K. Fujito, J. Speck, and S. Nakamura, "Misfit Dislocation Formation in Partially Strain-Relaxed(11-22) Semipolar InGaN", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
2010
Matioli, E., B. Fleury, E. Rangel, E. Hu, J. Speck, and C. Weisbuch, "Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes", Journal of applied physics, vol. 107, no. 5: AIP, pp. 053114, 2010.
2006
Speck, J., "MBE-Grown AlGaN/GaN HEMTs on SiC", Meeting Abstracts, no. 11: The Electrochemical Society, pp. 484–484, 2006.
2000
Erker, E. G., A. S. Nagra, Y. Liu, P. Periaswamy, T. R. Taylor, J. Speck, and R. A. York, "Monolithic Ka-band phase shifter using voltage tunable BaSrTiO/sub 3/parallel plate capacitors", IEEE microwave and guided wave letters, vol. 10, no. 1: IEEE, pp. 10–12, 2000.