Publications

Found 4 results
Author Title Type [ Year(Desc)]
Filters: Author is Vetury, R  [Clear All Filters]
1999
Vetury, R., H. Marchand, G. Parish, PT. Fini, JP. Ibbetson, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Chapter 5: Field Effect Transistors (FETs and HEMTs)-First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 177–184, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
Vetury, R., H. Marchand, G. Parish, PT. Fini, JP. Ibbetson, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 177–184, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of applied physics, vol. 86, no. 8: AIP, pp. 4520–4526, 1999.