Publications

Found 12 results
Author Title Type [ Year(Asc)]
Filters: Author is Haus, E  [Clear All Filters]
2003
Green, DS., E. Haus, F. Wu, L. Chen, UK. Mishra, and JS. Speck, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.
2000
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Heying, B., R. Averbeck, LF. Chen, E. Haus, H. Riechert, and JS. Speck, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: AIP, pp. 1855–1860, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Smorchkova, IP., E. Haus, B. Heying, P. Kozodoy, P. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
Elhamri, S., A. Saxler, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, JP. Ibbetson, S. Keller, et al., "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
Heying, B., R. Averbeck, LF. Chen, E. Haus, H. Riechert, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: New York, NY: American Institute of Physics, c1937-, pp. 1855–1860, 2000.
Smorchkova, IP., E. Haus, B. Heying, P. Kozodoy, P. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
1999
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
Elsass, CR., IP. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, JP. Ibbetson, S. Keller, PM. Petroff, SP. DenBaars, et al., "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
Heying, B., I. Smorchkova, C. Elsass, E. Haus, P. Fini, T. Mates, SP. DenBaars, U. Mishra, and JS. Speck, "Optimization of high quality GaN by MBE", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1065, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of applied physics, vol. 86, no. 8: AIP, pp. 4520–4526, 1999.