Publications

Found 7 results
Author Title Type [ Year(Asc)]
Filters: Author is Fini, P and First Letter Of Title is M  [Clear All Filters]
2006
Paskova, T., R. Kroeger, PP. Paskov, S. Figge, D. Hommel, B. Monemar, B. Haskell, P. Fini, JS. Speck, and S. Nakamura, "Microscopic emission properties of nonpolar α-plane GaN grown by HVPE", Gallium Nitride Materials and Devices, vol. 6121: International Society for Optics and Photonics, pp. 612106, 2006.
2003
Romanov, AE., P. Fini, and JS. Speck, "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability", Journal of applied physics, vol. 93, no. 1: AIP, pp. 106–114, 2003.
2002
Hansen, M., P. Fini, M. Craven, B. Heying, JS. Speck, and SP. DenBaars, "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN", Journal of crystal growth, vol. 234, no. 4: North-Holland, pp. 623–630, 2002.
1999
Fini, P., H. Marchand, JP. Ibbetson, B. Moran, L. Zhao, SP. DenBaars, JS. Speck, and UK. Mishra, "Maskless lateral epitaxial overgrowth of GaN on sapphire", MRS Online Proceedings Library Archive, vol. 572: Cambridge University Press, 1999.