Publications
"Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells H. Shen, GA Garrett, and M. Wraback US Army Research Laboratory 2800 Powder Mill Road, Adelphi, MD 20783", Phys. Lett, vol. 92, pp. 221110, 2008.
, "CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", ?????????????????????, vol. 2007, no. 2: ??????????????, 2007.
, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
, "Formation and reduction of pyramidal hillocks on m-plane ${$1 1 00$}$ GaN", Applied Physics Letters, vol. 91, no. 19: AIP, pp. 191906, 2007.
, "High Power and High External Efficiency m-Plane InGaN LEDs", The European Conference on Lasers and Electro-Optics: Optical Society of America, pp. CE3_3, 2007.
, "Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method", Applied Physics Letters, vol. 91, no. 25: AIP, pp. 251911, 2007.
, "On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 341–342, 2007.
, "Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Complex Oxides-Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple", Journal of Vacuum Science and Technology-Section B, vol. 25, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 1524–1528, 2007.
, "Progress in the growth of nonpolar gallium nitride", physica status solidi (b), vol. 244, no. 8: Wiley Online Library, pp. 2847–2858, 2007.
, "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
, , "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
, "Microscopic emission properties of nonpolar α-plane GaN grown by HVPE", Gallium Nitride Materials and Devices, vol. 6121: International Society for Optics and Photonics, pp. 612106, 2006.
, "Optical properties of nonpolar a-plane GaN layers", Superlattices and Microstructures, vol. 40, no. 4-6: Academic Press, pp. 253–261, 2006.
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Realization of high hole concentrations in Mg doped semipolar (10 1\= 1\=) GaN", Applied physics letters, vol. 89, no. 20: AIP, pp. 202104, 2006.
, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
, "Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN", physica status solidi (a), vol. 202, no. 5: Wiley Online Library, pp. 846–849, 2005.
, "Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques", Applied Physics Letters, vol. 86, no. 2: AIP, pp. 021914, 2005.
, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
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