Publications
"Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
, "Stable vicinal step orientations in m-plane GaN", Journal of Crystal Growth, vol. 411: Elsevier, pp. 56–62, 2015.
, "Basic ammonothermal GaN growth in molybdenum capsules", Journal of Crystal Growth, vol. 456: North-Holland, pp. 15–20, 2016.
, "Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications", Journal of Crystal Growth, vol. 455: North-Holland, pp. 105–110, 2016.
, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.
, "High-power LEDs using Ga-doped ZnO current-spreading layers", Electronics Letters, vol. 52, no. 4: IET Digital Library, pp. 304–306, 2016.
, "Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture", Applied Physics Letters, vol. 108, no. 3: AIP Publishing, pp. 031111, 2016.
, "Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes", Applied Physics Letters, vol. 108, no. 6: AIP Publishing, pp. 061105, 2016.
, "Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction", Applied Physics Letters, vol. 109, no. 19: AIP Publishing, pp. 191104, 2016.
, "Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes", Applied Physics Letters, vol. 109, no. 6: AIP Publishing, pp. 061109, 2016.
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