Publications
Found 6 results
Author Title Type [ Year
Filters: Author is Nakamura, S and First Letter Of Title is S [Clear All Filters]
"Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
, "Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane", Journal of Crystal Growth, vol. 368: Elsevier, pp. 67–71, 2013.
, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
, "Stable vicinal step orientations in m-plane GaN", Journal of Crystal Growth, vol. 411: Elsevier, pp. 56–62, 2015.
, "Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction", Applied Physics Letters, vol. 109, no. 19: AIP Publishing, pp. 191104, 2016.
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