Publications

Found 6 results
Author Title Type [ Year(Asc)]
Filters: Author is Nakamura, S and First Letter Of Title is N  [Clear All Filters]
2016
Leonard, JT., BP. Yonkee, DA. Cohen, L. Megalini, S. Lee, JS. Speck, SP. DenBaars, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture", Applied Physics Letters, vol. 108, no. 3: AIP Publishing, pp. 031111, 2016.
2015
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
2014
Holder, CO., JT. Leonard, RM. Farrell, DA. Cohen, B. Yonkee, JS. Speck, SP. DenBaars, S. Nakamura, and DF. Feezell, "Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching", Applied Physics Letters, vol. 105, no. 3: AIP, pp. 031111, 2014.
2013
Marcinkevičius, S., Y. Zhao, KM. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Near-field investigation of spatial variations of (20 2\= 1\=) InGaN quantum well emission spectra", Applied Physics Letters, vol. 103, no. 13: AIP, pp. 131116, 2013.
2008
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.
2004
Chakraborty, A., BA. Haskell, S. Keller, JS. Speck, SP. DenBaars, S. Nakamura, and UK. Mishra, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.