Publications

Found 158 results
Author Title Type [ Year(Asc)]
Filters: Author is Mishra, UK  [Clear All Filters]
1996
Keller, S., BP. Keller, Y-F. Wu, B. Heying, D. Kapolnek, JS. Speck, UK. Mishra, and SP. DenBaars, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
Wu, XH., P. Fini, S. Keller, EJ. Tarsa, B. Heying, UK. Mishra, SP. DenBaars, and JS. Speck, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
Wu, XH., D. Kapolnek, EJ. Tarsa, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
1995
Keller, BP., S. Keller, D. Kapolnek, WN. Jiang, YF. Wu, H. Masui, X. Wu, B. Heying, JS. Speck, UK. Mishra, et al., "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
Kapolnek, D., XH. Wu, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
1993
Ibbetson, JP., JS. Speck, AC. Gossard, and UK. Mishra, "Observation of arsenic precipitates in GaInAs grown at low temperature on InP", Applied physics letters, vol. 62, no. 18: AIP, pp. 2209–2211, 1993.
Ibbetson, JP., JS. Speck, AC. Gossard, and UK. Mishra, "Observation of impurity effects on the nucleation of arsenic precipitates in GaAs", Applied physics letters, vol. 62, no. 2: AIP, pp. 169–171, 1993.
Ibbetson, JP., JS. Speck, NX. Nguyen, AC. Gossard, and UK. Mishra, "The role of microstructure in the electrical properties of GaAs grown at low temperature", Journal of electronic materials, vol. 22, no. 12: Springer-Verlag, pp. 1421–1424, 1993.

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