Publications

Found 367 results
Author Title Type [ Year(Desc)]
Filters: Author is Nakamura, Shuji  [Clear All Filters]
2011
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2011.
Kamber, D. S., S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved purity and method of producing the same, 2011.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, jun # " 7", 2011.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, 2011.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2011.
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
DenBaars, S. P., S. Nakamura, and J. S. Speck, High efficiency light emitting diode (LED), jun # " 7", 2011.
Zhao, Y., S. Tanaka, R. Chung, C-C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, "Highly Polarized Spontaneous Emission from Semipolar(20-2-1) InGaN/GaN Light-Emitting Diodes", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Zhao, Y., S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2", Applied physics express, vol. 4, no. 8: IOP Publishing, pp. 082104, 2011.
Huang, C-Y., Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Influence of Mg-doped barriers on semipolar (20 2\= 1) multiple-quantum-well green light-emitting diodes", Applied Physics Letters, vol. 99, no. 14: AIP, pp. 141114, 2011.
Hirai, A., J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for increasing the area of non-polar and semi-polar nitride substrates, 2011.
Hsu, P. Shan, E. Young, A. Romanov, K. Fujito, J. Speck, and S. Nakamura, "Misfit Dislocation Formation in Partially Strain-Relaxed(11-22) Semipolar InGaN", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hsu, P. Shan, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Misfit dislocation formation via pre-existing threading dislocation glide in (11 2\= 2) semipolar heteroepitaxy", Applied Physics Letters, vol. 99, no. 8: AIP, pp. 081912, 2011.
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.
Chung, R. B., Z. Chen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys, 2011.
Feezell, D., J. Speck, S. DenBaars, and S. Nakamura, "Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates", 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011, 01, 2011.
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2011.
Matioli, E., S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals", Applied Physics Letters, vol. 98, no. 25: AIP, pp. 251112, 2011.
Brinkley, S. E., Y-. Da Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes", Applied Physics Letters, vol. 98, no. 1: AIP, pp. 011110, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Semiconductors, dielectrics, and organic materials-101001 Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82 In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10, 2011.
Tyagi, A., R. M. Farrell, C-Y. Huang, P. Shan Hsu, D. A. Haeger, K. M. Kelchner, H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semipolar iii-nitride laser diodes with etched mirrors, 2011.
Koslow, I., M. Hardy, P-S. Hsu, E. Young, S. Nakamura, J. Speck, and S. DenBaars, "Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.

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