Publications

Found 367 results
Author Title Type [ Year(Desc)]
Filters: Author is Nakamura, Shuji  [Clear All Filters]
2010
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2010.
Saito, M., S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Young, E. C., F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
Zhong, H., J. F. Kaeding, R. Sharma, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Huang, C-Y., Y-. Da Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, vol. 107, no. 2: AIP, pp. 023101, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, no. 8, 2010.
Wu, F., Y-. Da Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231912, 2010.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, nov # " 11", 2010.
2011
Raring, J. W., M. C. Schmidt, C. Poblenz, M. J. Mondry, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, "47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems", SID Symposium Digest of Technical Papers, vol. 42, no. 1: Wiley Online Library, pp. 677–680, 2011.
Chung, R. Byung- Kyu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Abnormal Behavior of MOCVD Grown Al x In 1-x N Observed by Various Material Characterizations", 한국재료학회, vol. 17, 10/2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals, sep # " 1", 2011.
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.
Romanov, A. E., E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy", Journal of Applied Physics, vol. 109, no. 10: AIP, pp. 103522, 2011.
Pimputkar, S., S. Kawabata, J. Speck, and S. Nakamura, "Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystal, 2011.
Huang, C-Y., M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21) InGaN/GaN quantum wells", Applied Physics Letters, vol. 99, no. 24: AIP, pp. 241115, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Hardy, MT., RM. Farrell, P. S. Hsu, DA. Haeger, K. Kelchner, K. Fujito, A. Chakraborty, DA. Cohen, S. Nakamura, JS. Speck, et al., "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.

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