Publications

Found 34 results
Author Title Type [ Year(Asc)]
Filters: Author is Nakamura, Shuji and First Letter Of Title is H  [Clear All Filters]
2010
Saito, M., S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
2009
D'evelyn, M. P., J. S. Speck, M. T. Coulter, and S. Nakamura, Heater device and method for high pressure processing of crystalline materials, 2009.
2008
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency semipolar InGaN light emitting diodes", Journal of Light & Visual Environment, vol. 32, no. 2: The Illuminating Engineering Institute of Japan, pp. 107–110, 2008.
2007
Iso, K., H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L960, 2007.
Tyagi, A., H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 2L: IOP Publishing, pp. L129, 2007.
Zhong, H., A. Tyagi, N. N. Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
Sato, H., A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency green light emitting diode on free-standing semipolar (112̅2) bulk GaN substrate", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 4: WILEY-VCH Verlag, pp. 162–164, 2007.
Schmidt, M. C., K-C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High power and high external efficiency m-plane InGaN light emitting diodes", Japanese journal of applied physics, vol. 46, no. 2L: IOP Publishing, pp. L126, 2007.

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