Publications

Found 331 results
Author Title Type [ Year(Desc)]
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2007
Imer, B., F. Wu, J. S. Speck, and S. P. DenBaars, "Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)", Journal of Crystal Growth, vol. 306, no. 2: Elsevier, pp. 330–338, 2007.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, 2007.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy, 2007.
Iso, K., H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L960, 2007.
Tyagi, A., H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 2L: IOP Publishing, pp. L129, 2007.
Zhong, H., A. Tyagi, N. N. Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
Sato, H., A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency green light emitting diode on free-standing semipolar (112̅2) bulk GaN substrate", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 4: WILEY-VCH Verlag, pp. 162–164, 2007.
Schmidt, M. C., K-C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High power and high external efficiency m-plane InGaN light emitting diodes", Japanese journal of applied physics, vol. 46, no. 2L: IOP Publishing, pp. L126, 2007.
Yamada, H., K. Iso, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes", Japanese Journal of Applied Physics, vol. 46, no. 12L: IOP Publishing, pp. L1117, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 125–127, 2007.
Kamber, D. S., Y. Wu, E. Letts, S. P. DenBaars, J. S. Speck, S. Nakamura, and S. A. Newman, "Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy", Applied physics letters, vol. 90, no. 12: AIP, pp. 122116, 2007.
Wong, M. Hoi, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. S. McCarthy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.
Fichtenbaum, N. A., C. J. Neufeld, C. Schaake, Y. Wu, M. Hoi Wong, M. Grundmann, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L230, 2007.
Fujii, K., Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, et al., "Photoelectrochemical properties of nonpolar and semipolar GaN", Japanese Journal of Applied Physics, vol. 46, no. 10R: IOP Publishing, pp. 6573, 2007.
Behn, U., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy", physica status solidi (a), vol. 204, no. 1: Wiley Online Library, pp. 299–303, 2007.
Feezell, D. F., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Recent performance of nonpolar and semipolar GaN-based light emitting diodes and laser diodes", Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE: IEEE, pp. 1–4, 2007.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar (1011) InGaN", Japanese journal of applied physics, vol. 46, no. 17-19: Japanese journal of applied physics, 2007.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 5L: IOP Publishing, pp. L444, 2007.
Weisbuch, C. C. A., A. J. F. David, J. S. Speck, and S. P. DenBaars, Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate, 2007.
Chakraborty, A., B. A. Haskell, F. Wu, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, may # " 22", 2007.

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