Publications

Found 21 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S and First Letter Of Title is R  [Clear All Filters]
2018
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
2017
Vurpillot, F., D. Zanuttini, S. Parviainen, B. Mazumder, N. Rolland, C. Hatzoglou, and J. S. Speck, "Reconstructing APT Datasets: Challenging the Limits of the Possible", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 640–641, 2017.
2016
Pimputkar, S., S. Nakamura, and J. S. Speck, Reactor vessels for ammonothermal and flux-based growth of group-iii nitride crystals, 2016.
2015
Weisbuch, C., M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, "Recent and forthcoming publications in pss", Phys. Status Solidi A, vol. 212, no. 4, pp. 713, 2015.
Hestroffer, K., F. Wu, H. Li, C. Lund, S. Keller, J. S. Speck, and U. K. Mishra, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
2014
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Reactor designs for use in ammonothermal growth of group-III nitride crystals, feb # " 4", 2014.
Pimputkar, S., D. Shane Kamber, J. S. Speck, and S. Nakamura, Reactor designs for use in ammonothermal growth of group-iii nitride crystals, 2014.
Keller, S., H. Li, M. Laurent, Y. Hu, N. Pfaff, J. Lu, D. F. Brown, N. A. Fichtenbaum, J. S. Speck, S. P. DenBaars, et al., "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
Chen, J., E. Xia Zhang, C. Xuan Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
2012
Pan, C-C., T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes", Applied Physics Express, vol. 5, no. 10: IOP Publishing, pp. 102103, 2012.
Chung, R. B., C. Han, C-C. Pan, N. Pfaff, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
2011
Gao, F., B. Lu, L. Li, S. Kaun, J. S. Speck, C. V. Thompson, and T. Palacios, "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223506, 2011.
2009
Masui, H., M. Schmidt, N. Fellows, H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Recent progress in nonpolar LEDs as polarized light emitters", physica status solidi (a), vol. 206, no. 2: Wiley Online Library, pp. 203–205, 2009.
Gallinat, C. S., G. Koblmüller, and J. S. Speck, "The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN", Applied Physics Letters, vol. 95, no. 2: AIP, pp. 022103, 2009.
2007
Feezell, D. F., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Recent performance of nonpolar and semipolar GaN-based light emitting diodes and laser diodes", Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE: IEEE, pp. 1–4, 2007.
Nakamura, S., and J. S. Speck, Recent Performance of Nonpolar/Semipolar/Polar GaN-based Blue LEDs/LDs and Bulk GaN Crystal Growth, 2007.
2003
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
2002
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
2001
Speck, J. S., "The role of threading dislocations in the physical properties of GaN and its alloys", Materials Science Forum, vol. 353: Trans Tech Publications, pp. 769–778, 2001.
1999
G Stephenson, B., J. A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P. H. Fuoss, P. Fini, S. P. DenBaars, and J. S. Speck, "Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN", MRS Bulletin, vol. 24, no. 1: Cambridge University Press, pp. 21–25, 1999.
1998
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "r here has been significant development of c-plane", MRS Internet J. Nitride Semicond. Res, vol. 3, pp. 15, 1998.