Publications

Found 5 results
Author Title Type [ Year(Asc)]
Filters: Author is Heying, B and First Letter Of Title is P  [Clear All Filters]
2001
Pozina, G., JP. Bergman, B. Monemar, B. Heying, and JS. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
2000
Elhamri, S., A. Saxler, D. Cull, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, C. Poblenz, P. Fini, S. Keller, et al., "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
Elhamri, S., A. Saxler, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, JP. Ibbetson, S. Keller, et al., "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
1999
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of applied physics, vol. 86, no. 8: AIP, pp. 4520–4526, 1999.