Publications

Found 5 results
Author Title Type [ Year(Asc)]
Filters: Author is Stacia Keller  [Clear All Filters]
2023
Hamwey, R., N. Hatui, E. Akso, F. Wu, C. Clymore, S. Keller, J. S. Speck, and U. K. Mishra, "First Demonstration of an N-Polar InAlGaN/GaN HEMT", IEEE Electron Device Letters, vol. 45, issue 3, pp. 328-331, 2023.
2020
Wurm, C., E. Ahmadi, F. Wu, N. Hatui, S. Keller, J. Speck, and U. Mishra, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.
Bonef, B., C. E. Reilly, F. Wu, S. Nakamura, S. P. DenBaars, S. Keller, and J. S. Speck, "Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition", Applied Physics Express, vol. 13, pp. 065005, may, 2020.
2019
Reilly, C. E., B. Bonef, S. Nakamura, J. S. Speck, S. P. DenBaars, and S. Keller, "Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 34, pp. 125002, oct, 2019.
2005
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.