Publications

Found 9 results
Author Title Type [ Year(Asc)]
Filters: Author is Bierwagen, O  [Clear All Filters]
2015
Korhonen, E., V. Prozheeva, F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, et al., "Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO", Semiconductor Science and Technology, vol. 30, no. 2: IOP Publishing, pp. 024011, 2015.
2014
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, and Z. Galazka, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
von Wenckstern, H., D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, JS. Speck, and others, "Schottky contacts to In ${$sub 2$}$ O ${$sub 3$}$", APL Materials, vol. 2, no. 4, 2014.
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, and Z. Galazka, "Vacancy complexes in Sb-doped SnO 2", AIP Conference Proceedings, vol. 1583, no. 1: AIP, pp. 368–371, 2014.
Farahani, SK. Vasheghani, TD. Veal, JJ. Mudd, DO. Scanlon, GW. Watson, O. Bierwagen, ME. White, JS. Speck, and CF. McConville, "Valence-band density of states and surface electron accumulation in epitaxial SnO 2 films", Physical Review B, vol. 90, no. 15: American Physical Society, pp. 155413, 2014.
2012
Farahani, SK. Vasheghani, TD. Veal, AM. Sanchez, O. Bierwagen, ME. White, S. Gorfman, PA. Thomas, JS. Speck, and CF. McConville, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
2011
Nagata, T., O. Bierwagen, ME. White, MY. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, and JS. Speck, "XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films", Applied Physics Letters, vol. 98, no. 23: AIP, pp. 232107, 2011.
2009
Bierwagen, O., T. Nagata, T. Ive, CG. Van de Walle, and JS. Speck, "Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 152110, 2009.
White, ME., O. Bierwagen, MY. Tsai, and JS. Speck, "Electron transport properties of antimony doped Sn O 2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 9: AIP, pp. 093704, 2009.