Publications

Found 4 results
Author Title Type [ Year(Asc)]
Filters: Author is Kawaguchi, Yoshinobu  [Clear All Filters]
2013
Kawaguchi, Y., S-C. Huang, R. M. Farrell, Y. Zhao, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
Zhao, Y., F. Wu, C-Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Suppressing void defects in long wavelength semipolar (20 2 1) InGaN quantum wells by growth rate optimization", Applied Physics Letters, vol. 102, no. 9: AIP, pp. 091905, 2013.
2012
Zhao, Y., Q. Yan, C-Y. Huang, S-C. Huang, P. Shan Hsu, S. Tanaka, C-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, et al., "Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 201108, 2012.