Publications

Found 14 results
Author Title Type [ Year(Asc)]
Filters: Author is Wraback, M  [Clear All Filters]
2013
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Optimization of annealing process for improved InGaN solar cell performance", Journal of electronic materials, vol. 42, no. 12: Springer US, pp. 3467–3470, 2013.
2012
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
2010
Shen, H., GA. Garrett, M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Polarization field crossover in semi-polar InGaN/GaN single quantum wells", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2378–2381, 2010.
2009
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Determination of polarization field in a semipolar (11 2\= 2) In Ga/ Ga N single quantum well using Franz–Keldysh oscillations in electroreflectance", Applied Physics Letters, vol. 94, no. 24: AIP, pp. 241906, 2009.
Koblmüller, G., GD. Metcalfe, M. Wraback, F. Wu, CS. Gallinat, and JS. Speck, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
Metcalfe, GD., M. Wraback, F. Wu, CS. Gallinat, JS. Speck, and others, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
2008
Chern-Metcalfe, GD., ED. Readinger, H. Shen, M. Wraback, G. Koblmüller, CS. Gallinat, and JS. Speck, "Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1846–1848, 2008.
Koblmüller, G., A. Hirai, F. Wu, CS. Gallinat, GD. Metcalfe, H. Shen, M. Wraback, and JS. Speck, "Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN", Applied Physics Letters, vol. 93, no. 17: AIP, pp. 171902, 2008.
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.
2006
Koblmüller, G., CS. Gallinat, S. Bernardis, JS. Speck, GD. Chern, ED. Readinger, H. Shen, and M. Wraback, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
2005
Garrett, GA., H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN", physica status solidi (a), vol. 202, no. 5: Wiley Online Library, pp. 846–849, 2005.
Rudin, S., GA. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells", Semiconductor Device Research Symposium, 2005 International: IEEE, pp. 225–226, 2005.