Publications

Found 31 results
Author Title Type [ Year(Desc)]
Filters: Author is Tyagi, Anurag  [Clear All Filters]
2013
Nakamura, S., J. S. Speck, S. P. DenBaars, and A. Tyagi, Cleaved facet (Ga, Al, In) N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates, 2013.
2014
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Speck, J. S., A. Tyagi, S. P. DenBaars, and S. Nakamura, Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning, 2014.
2015
Zhong, H., A. Tyagi, K. J. Vampola, J. S. Speck, S. P. DenBaars, and S. Nakamura, High light extraction efficiency nitride based light emitting diode by surface roughening, 2015.
Hsu, P. Shan, K. M. Kelchner, R. M. Farrell, D. A. Haeger, H. Ohta, A. Tyagi, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than+/-15 degrees in the c-direction, 2015.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface, 2015.

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