Publications

Found 29 results
Author Title Type [ Year(Desc)]
Filters: Author is Arehart, AR  [Clear All Filters]
2016
Chen, J., YS. Puzyrev, EX. Zhang, DM. Fleetwood, RD. Schrimpf, AR. Arehart, SA. Ringel, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
Zhang, Z., D. Cardwell, A. Sasikumar, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, AR. Arehart, et al., "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 119, no. 16: AIP Publishing, pp. 165704, 2016.
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
2017
Sun, W., Z. Zhang, T. Mohsin, E. Farzana, B. McSkimming, C. Lee, P. Saunier, J. Speck, SA. Ringel, and AR. Arehart, GENERAL MODEL FOR IRRADIATION-INDUCED DEGRADATION OF GaN HEMTS, 2017.

Pages