Publications

Found 384 results
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2016
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Sintonen, S., P. Kivisaari, S. Pimputkar, S. Suihkonen, T. Schulz, J. S. Speck, and S. Nakamura, "Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN", Journal of Crystal Growth, vol. 456: North-Holland, pp. 43–50, 2016.
Suihkonen, S., S. Pimputkar, J. S. Speck, and S. Nakamura, "Infrared absorption of hydrogen-related defects in ammonothermal GaN", Applied Physics Letters, vol. 108, no. 20: AIP Publishing, pp. 202105, 2016.
Eisele, H., J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, et al., "Intrinsic electronic properties of high-quality wurtzite InN", Physical Review B, vol. 94, no. 24: American Physical Society, pp. 245201, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, H. Albrithen, S. Suihkonen, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part I: System development", Journal of Crystal Growth, vol. 456: North-Holland, pp. 58–66, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes", Journal of Crystal Growth, vol. 456: North-Holland, pp. 67–72, 2016.
Pimputkar, S., S. Nakamura, and J. S. Speck, Reactor vessels for ammonothermal and flux-based growth of group-iii nitride crystals, 2016.
Griffiths, S., S. Pimputkar, J. S. Speck, and S. Nakamura, "On the solubility of gallium nitride in supercritical ammonia–sodium solutions", Journal of Crystal Growth, vol. 456: North-Holland, pp. 5–14, 2016.
Pimputkar, S., T. F. Malkowski, S. Griffiths, A. Espenlaub, S. Suihkonen, J. S. Speck, and S. Nakamura, "Stability of materials in supercritical ammonia solutions", The Journal of Supercritical Fluids, vol. 110: Elsevier, pp. 193–229, 2016.
Kowsz, S., C. Pynn, R. Farrell, J. Speck, S. DenBaars, and S. Nakamura, "Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
2017
Mazumder, B., S. Broderick, K. Rajan, J. Peralta, H. Foronda, and J. S. Speck, "Field Evaporation Behavior of Ternary Compound Semiconductor In x Al ix N", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 636–637, 2017.
Kuritzky, L. Y., A. C. Espenlaub, B. P. Yonkee, C. D. Pynn, S. P. DenBaars, S. Nakamura, C. Weisbuch, and J. S. Speck, "High wall-plug efficiency blue III-nitride LEDs designed for low current density operation", Optics express, vol. 25, no. 24: Optical Society of America, pp. 30696–30707, 2017.
D'evelyn, M. P., J. S. Speck, D. S. Kamber, and D. W. Pocius, Large area nitride crystal and method for making it, 2017.
D'evelyn, M. P., J. S. Speck, D. S. Kamber, and D. W. Pocius, Large area nitride crystal and method for making it, 2017.
Piccardo, M., C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, M. Filoche, L. Martinelli, J. Peretti, and C. Weisbuch, "Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144205, 2017.
Piccardo, M., C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, M. Filoche, L. Martinelli, J. Peretti, and C. Weisbuch, "Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144205, 2017.
Li, C-K., M. Piccardo, L-S. Lu, S. Mayboroda, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch, M. Filoche, and Y-R. Wu, "Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144206, 2017.
Li, C-K., M. Piccardo, L-S. Lu, S. Mayboroda, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch, M. Filoche, and Y-R. Wu, "Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes", Physical Review B, vol. 95, no. 14: American Physical Society, pp. 144206, 2017.
Vurpillot, F., D. Zanuttini, S. Parviainen, B. Mazumder, N. Rolland, C. Hatzoglou, and J. S. Speck, "Reconstructing APT Datasets: Challenging the Limits of the Possible", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 640–641, 2017.
Forman, C., J. Leonard, B. Yonkee, C. Pynn, T. Mates, D. Cohen, R. Farrell, T. Margalith, S. DenBaars, J. Speck, et al., "Semipolar (202Ø1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect", Journal of Crystal Growth, vol. 464: North-Holland, pp. 197–200, 2017.
Kowsz, S. J., E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells", Optics express, vol. 25, no. 4: Optical Society of America, pp. 3841–3849, 2017.
Kelchner, K. M., J. S. Speck, N. A. Pfaff, and S. P. DenBaars, White light source employing a III-nitride based laser diode pumping a phosphor, 2017.
2018
Filoche, M., M. Piccardo, C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, S. Mayboroda, J-M. Lentali, L. Martinelli, et al., "Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320S, 2018.

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