Publications

Found 384 results
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2013
Poblenz, C., J. S. Speck, and D. S. Kamber, Ammonothermal method for growth of bulk gallium nitride, 2013.
Pimputkar, S., P. Von Dollen, S. Nakamura, and J. S. Speck, Apparatus used for the growth of group-iii nitride crystals utilizing carbon fiber containing materials and group-iii nitride grown therewith, 2013.
Von Dollen, P., J. S. Speck, and S. Pimputkar, Crystal growth using non-thermal atmospheric pressure plasmas, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
Iveland, J., L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop", Physical review letters, vol. 110, no. 17: American Physical Society, pp. 177406, 2013.
Preissler, N., O. Bierwagen, A. T. Ramu, and J. S. Speck, "Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films", Physical Review B, vol. 88, no. 8: APS, pp. 085305, 2013.
Pimputkar, S., and J. S. Speck, Growth of bulk group-iii nitride crystals after coating them with a group-iii metal and an alkali metal, 2013.
Nakamura, S., S. P. DenBaars, D. F. Feezell, J. S. Speck, C-C. Pan, and S. Tanaka, High output power, high efficiency blue light-emitting diodes, nov # " 14", 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Speck, J. S., C. C. A. Weisbuch, N. Pfaff, L. Kuritzky, and C. Lalau Keraly, Light emitting diode with conformal surface electrical contacts with glass encapsulation, 2013.
Nakamura, S., S. P. DenBaars, D. F. Feezell, J. S. Speck, and C-C. Pan, Light-emitting diodes with low temperature dependence, 2013.
Chen, J., Y. S. Puzyrev, C. Xuan Zhang, E. Xia Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, et al., "Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 60, no. 6: IEEE, pp. 4080–4086, 2013.
Chen, J., Y. S. Puzyrev, C. Xuan Zhang, E. Xia Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, et al., "Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 60, no. 6: IEEE, pp. 4080–4086, 2013.
Pourhashemi, A., RM. Farrell, MT. Hardy, PS. Hsu, KM. Kelchner, JS. Speck, SP. DenBaars, and S. Nakamura, "Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151112, 2013.
Preissler, N., O. Bierwagen, A. T. Ramu, and J. S. Speck, "The Seebeck coefficient of In 2 O 3-Inferences on causes of unintentional conductivity and electron effective mass", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2013.
Cardwell, DW., A. Sasikumar, AR. Arehart, SW. Kaun, J. Lu, S. Keller, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
Pimputkar, S., S. Kawabata, JS. Speck, and S. Nakamura, "Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane", Journal of Crystal Growth, vol. 368: Elsevier, pp. 67–71, 2013.
Pfaff, N. A., K. M. Kelchner, D. F. Feezell, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes", Applied Physics Express, vol. 6, no. 9: IOP Publishing, pp. 092104, 2013.

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