Publications
Found 645 results
Author Title Type [ Year
Filters: First Letter Of Last Name is N [Clear All Filters]
"Optical properties of nonpolar a-plane GaN layers", Superlattices and Microstructures, vol. 40, no. 4-6: Academic Press, pp. 253–261, 2006.
, "Phase selection of microcrystalline GaN synthesized in supercritical ammonia", Journal of crystal growth, vol. 291, no. 1: Elsevier, pp. 100–106, 2006.
, PI: Dr. Paul T. Fini, 2006.
, "Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy", Applied physics letters, vol. 88, no. 16: AIP, pp. 161920, 2006.
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Realization of high hole concentrations in Mg doped semipolar (10 1\= 1\=) GaN", Applied physics letters, vol. 89, no. 20: AIP, pp. 202104, 2006.
, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.
, "AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 4L: IOP Publishing, pp. L284, 2007.
, , "Cantilever Epitaxy of AlN using Hydride Vapor Phase Epitaxy", APS Meeting Abstracts, 2007.
, "Cantilever Epitaxy of AlN using Hydride Vapor Phase Epitaxy", APS Meeting Abstracts, 2007.
, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", physica status solidi (c), vol. 4, no. 7: Wiley Online Library, pp. 2423–2427, 2007.
, "CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", ?????????????????????, vol. 2007, no. 2: ??????????????, 2007.
, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
, , Focus on nonpolar gallium nitride: Wiley Online Library, 2007.
, "Formation and reduction of pyramidal hillocks on m-plane ${$1 1 00$}$ GaN", Applied Physics Letters, vol. 91, no. 19: AIP, pp. 191906, 2007.
, "A GaN bulk crystal with improved structural quality grown by the ammonothermal method", Nature materials, vol. 6, no. 8: Nature Publishing Group, pp. 568, 2007.
, "Growth of bulk GaN crystals by the basic ammonothermal method", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L889, 2007.
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