Publications

Found 645 results
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2016
Malkowski, T. F., S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave", Journal of Crystal Growth, vol. 456: North-Holland, pp. 21–26, 2016.
NiO, S-transparent., "applications and materials science", Phys. Status Solidi A, vol. 1, no. x2215, pp. x0029, 2016.
Pimputkar, S., JS. Speck, and S. Nakamura, "Basic ammonothermal GaN growth in molybdenum capsules", Journal of Crystal Growth, vol. 456: North-Holland, pp. 15–20, 2016.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, C. Shen, T. Margalith, T. Khee Ng, SP. DenBaars, B. S. Ooi, JS. Speck, et al., "Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481B, 2016.
Yonkee, B. P., E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact", Optics express, vol. 24, no. 7: Optical Society of America, pp. 7816–7822, 2016.
Kowsz, S. J., C. D. Pynn, F. Wu, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481Z, 2016.
Hwang, D., B. Yonkee, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Development of c-plane thin-film flip-chip LEDs fabricated by photoelectrochemical (PEC) liftoff", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Erratum: Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93, 045203 (2016)]", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 239905, 2016.
Young, NG., RM. Farrell, M. Iza, S. Nakamura, SP. DenBaars, C. Weisbuch, and JS. Speck, "Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications", Journal of Crystal Growth, vol. 455: North-Holland, pp. 105–110, 2016.
Shen, C., J. T. Leonard, E. C. Young, T. Khee Ng, S. P. DenBaars, J. S. Speck, S. Nakamura, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs", CLEO: Science and Innovations: Optical Society of America, pp. STh1L–2, 2016.
Shen, C., J. T. Leonard, E. C. Young, T. Khee Ng, S. P. DenBaars, J. S. Speck, S. Nakamura, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs", CLEO: Science and Innovations: Optical Society of America, pp. STh1L–2, 2016.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
Pynn, CD., SJ. Kowsz, SH. Oh, H. Gardner, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.
Alhassan, A. I., R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "High luminous efficacy green light-emitting diodes with AlGaN cap layer", Optics express, vol. 24, no. 16: Optical Society of America, pp. 17868–17873, 2016.
Cantore, M., N. Pfaff, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High luminous flux from single crystal phosphor-converted laser-based white lighting system", Optics Express, vol. 24, no. 2: Optical Society of America, pp. A215–A221, 2016.
Pourhashemi, A., R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, High power blue-violet III-nitride semipolar laser diodes, may # " 31", 2016.
Lee, C., C. Zhang, D. Becerra, S. Lee, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 809–810, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications", Optics letters, vol. 41, no. 11: Optical Society of America, pp. 2608–2611, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications", Optics letters, vol. 41, no. 11: Optical Society of America, pp. 2608–2611, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.

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